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TK12A65D

更新时间: 2024-11-18 12:23:03
品牌 Logo 应用领域
东芝 - TOSHIBA 稳压器开关
页数 文件大小 规格书
9页 268K
描述
Switching Voltage Regulators

TK12A65D 数据手册

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TK12A65D  
MOSFETs Silicon N-Channel MOS (π-MOS)  
TK12A65D  
1. Applications  
Switching Voltage Regulators  
2. Features  
(1) Low drain-source on-resistance: RDS(ON) = 0.46 (typ.)  
(2) High forward transfer admittance: |Yfs| = 6.0 S (typ.)  
(3) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V)  
(4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)  
3. Packaging and Internal Circuit  
1: Gate (G)  
2: Drain (D)  
3: Source (S)  
TO-220SIS  
4. Absolute Maximum Ratings (Note) (Ta = 25unless otherwise specified)  
Characteristics  
Symbol  
Rating  
Unit  
V
Drain-source voltage  
Gate-source voltage  
Drain current (DC)  
Drain current (pulsed)  
Power dissipation  
VDSS  
VGSS  
ID  
650  
±30  
(Note 1)  
(Note 1)  
12  
A
IDP  
48  
(Tc = 25)  
PD  
50  
W
mJ  
A
Single-pulse avalanche energy  
Avalanche current  
(Note 2)  
(Note 3)  
EAS  
IAR  
611  
12  
Repetitive avalanche energy  
Channel temperature  
EAR  
Tch  
5.0  
mJ  
150  
Storage temperature  
Tstg  
-55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
2011-06-03  
Rev.1.0  
1

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