Datasheet > TK12E80W

TK12E80W

更新时间： 2024-09-28 14:57:23

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
10页	414K
描述
N-ch MOSFET, 800 V, 0.45 Ω@10V, TO-220, DTMOSⅣ

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TK12E80W 数据手册

TK12E80W

MOSFETs Silicon N-Channel MOS (DTMOS)

TK12E80W

1. Applications

•

Switching Voltage Regulators

2. Features

(1) Low drain-source on-resistance: RDS(ON) = 0.38 Ω (typ.)

by using Super Junction Structure : DTMOS

(2) Easy to control Gate switching

(3) Enhancement mode: Vth = 3.0 to 4.0 V(VDS = 10 V, ID = 0.57 mA)

3. Packaging and Internal Circuit

1: Gate

2: Drain (Heatsink)

3: Source

TO-220

4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

VDSS

VGSS

800

±20

(Note 1)

11.5

IDP

(Tc = 25)

165

Single-pulse avalanche energy

Single-pulse avalanche current

Reverse drain current (DC)

Reverse drain current (pulsed)

Channel temperature

(Note 2)

EAS

IAS

326

2.3

(Note 1)

IDR

11.5

IDRP

Tch

150



Storage temperature

Tstg

TOR

-55 to 150

0.6

Mounting torque

Nm

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2016-02-13

Rev.5.0

12 3 4 5 6 7...10

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