Datasheet > TGF2021-08

TGF2021-08

更新时间： 2024-09-17 03:27:55

品牌	Logo	应用领域
泰科 - TE		射频微波高功率电源
页数	文件大小	规格书
8页	148K
描述
DC - 12 GHz Discrete power pHEMT

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TGF2021-08 数据手册

Advance Product Information

September 19, 2005

DC - 12 GHz Discrete power pHEMT

TGF2021-08

Key Features and Performance

•

Frequency Range: DC - 12 GHz

> 39 dBm Nominal Psat

59% Maximum PAE

11 dB Nominal Power Gain

Suitable for high reliability applications

8mm x 0.35 m Power pHEMT

Nominal Bias Vd = 8-12V, Idq = 600-1000mA

(Under RF Drive, Id rises from 600mA to 1920mA)

•

Chip Dimensions: 0.57 x 2.42 x 0.10 mm

(0.022 x 0.095 x 0.004 in)

Product Description

Primary Applications

•

Point-to-point Radio

High-reliability space

Military

The TriQuint TGF2021-08 is a discrete 8mm

pHEMT which operates from DC-12 GHz.

The TGF2021-08 is designed using

TriQuint’s proven standard 0.35um power

pHEMT production process.

Base Stations

Broadband Wireless Applications

The TGF2021-08 typically provides

> 39 dBm of saturated output power with

power gain of 11 dB. The maximum power

added efficiency is 59% which makes the

TGF2021-08 appropriate for high efficiency

applications.

MSG

MAG

The TGF2021-08 is also ideally suited for

Point-to-point Radio, High-reliability space,

and Military applications.

The TGF2021-08 has a protective surface

passivation layer providing environmental

robustness.

Frequency (GHz)

Lead-free and RoHS compliant

Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to

change without notice.

TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com

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