Datasheet > TGF2021-02

TGF2021-02

更新时间： 2024-09-17 06:01:19

品牌	Logo	应用领域
TRIQUINT		/
页数	文件大小	规格书
8页	126K
描述
DC - 12 GHz Discrete power pHEMT

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TGF2021-02 数据手册

Advance Product Information

September 19, 2005

DC - 12 GHz Discrete power pHEMT

TGF2021-02

Key Features and Performance

•

Frequency Range: DC - 12 GHz

> 33 dBm Nominal Psat

59% Maximum PAE

11 dB Nominal Power Gain

Suitable for high reliability applications

2mm x 0.35 m Power pHEMT

Nominal Bias Vd = 8-12V, Idq = 150-250mA

(Under RF Drive, Id rises from 150mA to 480mA)

•

Chip Dimensions: 0.57 x 0. 79 x 0.10 mm

(0.022 x 0.031 x 0.004 in)

Product Description

The TriQuint TGF2021-02 is a discrete

2 mm pHEMT which operates from DC-

12 GHz. The TGF2021-02 is designed

using TriQuint’s proven standard

0.35um power pHEMT production

process.

Primary Applications

•

Point-to-point Radio

High-reliability space

Military

Base Stations

Broadband Wireless Applications

The TGF2021-02 typically provides

> 33 dBm of saturated output power

with power gain of 11 dB. The

maximum power added efficiency is

59% which makes the TGF2021-02

appropriate for high efficiency

applications.

MSG

MAG

The TGF2021-02 is also ideally suited

for Point-to-point Radio, High-reliability

space, and Military applications.

The TGF2021-02 has a protective

surface passivation layer providing

environmental robustness.

Frequency (GHz)

Lead-free and RoHS compliant

Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to

change without notice.

TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com

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