TC7SG86AFS

更新时间： 2024-11-21 04:28:47

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	176K
描述
EXCLUSIVE OR GATE

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中文翻译

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数据手册

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TC7SG86AFS 数据手册

TC7SG86AFS

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC7SG86AFS

EXCLUSIVE OR GATE

Features

•

High-level output current:

I /I = ±8 mA (min)

OH OL

at V

= 3.0 V

•

High-speed operation: t = 2.6 ns (typ.)

at V

= 3.3 V,15pF

•

Operating voltage range: V

5.5-V tolerant inputs.

= 0.9~3.6 V

SON5-P-0.35

Weight: 0.001 g (typ.)

Marking

Pin Assignment (top view)

Product name

IN A

GND

IN B

W 8

OUT Y

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Power supply voltage

Symbol

Value

Unit

−0.5~4.6

−0.5~7.0

DC input voltage

DC output voltage

Input diode current

Output diode current

DC output current

−0.5~ V

+ 0.5

OUT

−20

°C

±20 (Note 1)

±25

OUT

DC V /ground current

±50

Power dissipation

Storage temperature

−65~150

stg

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1:

OUT

< GND, V > V

OUT CC

2007-11-01

12 3 4 5 6

中文翻译

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