TC7SG86FE
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SG86FE
2-Input EXCLUSIVE OR Gate
Features
High output current
: ±8 mA (min) at VCC = 3 V
Super high speed operation : t = 2.6 ns (typ.)
pd
at VCC = 3.3 V, 15pF
Operating voltage range: VCC = 0.9 to 3.6 V
5.5-V tolerant inputs.
3.6-V power down protection output.
(ESV)
Weight: 3.0 mg (typ.)
Marking
Product name
W 8
Absolute Maximum Ratings (Ta 25°C)
Pin Assignment (top view)
Characteristic
Supply voltage
Symbol
Rating
Unit
IN B
IN A
GND
1
2
3
5
V
CC
V
−0.5 to 4.6
V
V
CC
DC input voltage
V
−0.5 to 7.0
IN
−0.5 to 4.6 (Note 1)
DC output voltage
V
V
OUT
−0.5 to V
+ 0.5 (Note 2)
CC
4
OUT Y
Input diode current
Output diode current
DC output current
I
−20
mA
IK
I
−20
±25
±50
150
(Note 3) mA
OK
I
mA
mA
mW
°C
OUT
DC V /ground current
CC
I
CC
Power dissipation
P
D
Storage temperature
T
stg
−65 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: VCC = 0V
Note 2: High or Low state. Do not exceed IOUT of absolute maximum ratings.
Note 3: VOUT < GND
1
2009-07-09