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TC7SG86FE(TPL3,F) PDF预览

TC7SG86FE(TPL3,F)

更新时间: 2024-11-22 08:16:39
品牌 Logo 应用领域
东芝 - TOSHIBA 输入元件光电二极管逻辑集成电路石英晶振触发器
页数 文件大小 规格书
6页 155K
描述
IC,LOGIC GATE,2-INPUT XOR,CMOS,FP,6PIN,PLASTIC

TC7SG86FE(TPL3,F) 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:DFP, FL6,.047,20Reach Compliance Code:unknown
风险等级:5.84JESD-30 代码:R-PDFP-F6
负载电容(CL):30 pF逻辑集成电路类型:XOR GATE
最大I(ol):0.0003 A端子数量:6
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:DFP
封装等效代码:FL6,.047,20封装形状:RECTANGULAR
封装形式:FLATPACK包装方法:TAPE AND REEL
电源:1.2/3.3 VProp。Delay @ Nom-Sup:59.4 ns
认证状态:Not Qualified施密特触发器:NO
子类别:Gates表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:FLAT端子节距:0.5 mm
端子位置:DUALBase Number Matches:1

TC7SG86FE(TPL3,F) 数据手册

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TC7SG86FE  
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic  
TC7SG86FE  
2-Input EXCLUSIVE OR Gate  
Features  
High output current  
: ±8 mA (min) at VCC = 3 V  
Super high speed operation : t = 2.6 ns (typ.)  
pd  
at VCC = 3.3 V, 15pF  
Operating voltage range: VCC = 0.9 to 3.6 V  
5.5-V tolerant inputs.  
3.6-V power down protection output.  
(ESV)  
Weight: 3.0 mg (typ.)  
Marking  
Product name  
W 8  
Absolute Maximum Ratings (Ta 25°C)  
Pin Assignment (top view)  
Characteristic  
Supply voltage  
Symbol  
Rating  
Unit  
IN B  
IN A  
GND  
1
2
3
5
V
CC  
V
0.5 to 4.6  
V
V
CC  
DC input voltage  
V
0.5 to 7.0  
IN  
0.5 to 4.6 (Note 1)  
DC output voltage  
V
V
OUT  
0.5 to V  
+ 0.5 (Note 2)  
CC  
4
OUT Y  
Input diode current  
Output diode current  
DC output current  
I
20  
mA  
IK  
I
20  
±25  
±50  
150  
(Note 3) mA  
OK  
I
mA  
mA  
mW  
°C  
OUT  
DC V /ground current  
CC  
I
CC  
Power dissipation  
P
D
Storage temperature  
T
stg  
65 to 150  
Note:  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if  
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings and the operating ranges.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
Note 1: VCC = 0V  
Note 2: High or Low state. Do not exceed IOUT of absolute maximum ratings.  
Note 3: VOUT < GND  
1
2009-07-09  

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