Datasheet > TC7SG86FE_09

TC7SG86FE_09

更新时间： 2024-11-21 12:22:59

品牌	Logo	应用领域
东芝 - TOSHIBA		栅
页数	文件大小	规格书
6页	161K
描述
2-Input EXCLUSIVE OR Gate

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中文翻译

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数据手册

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TC7SG86FE_09 数据手册

TC7SG86FE

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC7SG86FE

2-Input EXCLUSIVE OR Gate

Features



High output current

: ±8 mA (min) at V_CC= 3 V

Super high speed operation : t = 2.6 ns (typ.)

at V_CC= 3.3 V, 15pF



Operating voltage range: V_CC= 0.9 to 3.6 V

5.5-V tolerant inputs.

3.6-V power down protection output.

(ESV)

Weight: 3.0 mg (typ.)

Marking

Product name

W 8

Absolute Maximum Ratings (Ta  25°C)

Pin Assignment (top view)

Characteristic

Supply voltage

Symbol

Rating

Unit

IN B

IN A

GND

−0.5 to 4.6

DC input voltage

−0.5 to 7.0

−0.5 to 4.6 (Note 1)

DC output voltage

OUT

−0.5 to V

+ 0.5 (Note 2)

OUT Y

Input diode current

Output diode current

DC output current

−20

±25

±50

150

(Note 3) mA

°C

OUT

DC V /ground current

Power dissipation

Storage temperature

stg

−65 to 150

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Note 1: V_CC= 0V

Note 2: High or Low state. Do not exceed I_OUTof absolute maximum ratings.

Note 3: V_OUT< GND

2009-07-09

12 3 4 5 6

中文翻译

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