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TC7SH00F_09 PDF预览

TC7SH00F_09

更新时间: 2024-11-21 12:22:59
品牌 Logo 应用领域
东芝 - TOSHIBA
页数 文件大小 规格书
7页 171K
描述
2-Input NAND Gate

TC7SH00F_09 数据手册

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TC7SH00F/FU  
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic  
TC7SH00F, TC7SH00FU  
2-Input NAND Gate  
TC7SH00F  
Features  
High speed operation : t  
3.7ns (typ.) at V  
= 5V, 15pF  
pd =  
CC  
Low power dissipation : I  
= 2μA (max) at Ta = 25°C  
CC  
5.5-V tolerant inputs  
Balanced propagation delays : t  
t  
pLH  
pHL  
Wide operating voltage range : V  
= 2 to 5.5V  
CC  
(SMV)  
TC7SH00FU  
Marking  
Product name  
H 1  
(USV)  
Weight  
SSOP5-P-0.95  
SSOP5-P-0.65A  
: 0.016 g (typ.)  
: 0.006 g (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Pin Assignment (top view)  
Characteristics  
Supply voltage  
Symbol  
Rating  
Unit  
V
V
0.5 to 7.0  
0.5 to 7.0  
CC  
IN B  
IN A  
GND  
1
2
3
5
V
CC  
DC input voltage  
V
V
IN  
DC output voltage  
Input diode current  
Output diode current  
DC output current  
V
0.5 to V +0.5  
V
OUT  
CC  
I
20  
mA  
mA  
mA  
mA  
mW  
°C  
IK  
I
± 20 (Note 1)  
OK  
4
OUT Y  
I
± 25  
± 50  
OUT  
DC V /ground current  
CC  
I
CC  
Power dissipation  
P
200  
D
Storage temperature  
Lead temperature (10s)  
T
65 to 150  
260  
stg  
T
°C  
L
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if  
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings and the operating ranges.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: VOUT <GND, VOUT > VCC  
1
2009-09-09  

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