Datasheet > TC7SH00F_09

TC7SH00F_09

更新时间： 2024-09-17 12:22:59

品牌	Logo	应用领域
东芝 - TOSHIBA		栅
页数	文件大小	规格书
7页	171K
描述
2-Input NAND Gate

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中文翻译

获取价格

数据手册

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TC7SH00F_09 数据手册

TC7SH00F/FU

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC7SH00F, TC7SH00FU

2-Input NAND Gate

TC7SH00F

Features

•

High speed operation : t

3.7ns (typ.) at V

= 5V, 15pF

pd =

Low power dissipation : I

= 2μA (max) at Ta = 25°C

5.5-V tolerant inputs

Balanced propagation delays : t

≈ t

pLH

pHL

Wide operating voltage range : V

= 2 to 5.5V

(SMV)

TC7SH00FU

Marking

Product name

H 1

(USV)

Weight

SSOP5-P-0.95

SSOP5-P-0.65A

: 0.016 g (typ.)

: 0.006 g (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Pin Assignment (top view)

Characteristics

Supply voltage

Symbol

Rating

Unit

− 0.5 to 7.0

IN B

IN A

GND

DC input voltage

DC output voltage

Input diode current

Output diode current

DC output current

− 0.5 to V +0.5

OUT

− 20

°C

± 20 (Note 1)

OUT Y

± 25

± 50

OUT

DC V /ground current

Power dissipation

200

Storage temperature

Lead temperature (10s)

− 65 to 150

260

stg

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: V_OUT<GND, V_OUT> V_CC

2009-09-09

12 3 4 5 6 7

中文翻译

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