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TC7SG86FU PDF预览

TC7SG86FU

更新时间: 2024-11-21 04:28:47
品牌 Logo 应用领域
东芝 - TOSHIBA 栅极触发器逻辑集成电路石英晶振光电二极管
页数 文件大小 规格书
6页 152K
描述
EXCLUSIVE OR Gate

TC7SG86FU 技术参数

是否Rohs认证: 不符合生命周期:Lifetime Buy
零件包装代码:SSOP包装说明:TSSOP, TSSOP5/6,.08
针数:5Reach Compliance Code:unknown
HTS代码:8542.39.00.01风险等级:5.65
Is Samacsys:N系列:LVP
JESD-30 代码:R-PDSO-G5JESD-609代码:e0
长度:2 mm负载电容(CL):30 pF
逻辑集成电路类型:XOR GATE最大I(ol):0.0003 A
功能数量:1输入次数:2
端子数量:5最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP5/6,.08
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
电源:1.2/3.3 VProp。Delay @ Nom-Sup:59.4 ns
传播延迟(tpd):59.4 ns认证状态:Not Qualified
施密特触发器:NO座面最大高度:1.1 mm
子类别:Gates最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):0.9 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN LEAD
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL宽度:1.25 mm
Base Number Matches:1

TC7SG86FU 数据手册

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TC7SG86FU  
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic  
TC7SG86FU  
EXCLUSIVE OR Gate  
Features  
High-level output current:  
I /I = ±8 mA (min)  
OH OL  
at V  
= 3 V  
CC  
High-speed operation: t = 2.7 ns (typ.)  
pd  
at V  
= 3.3 V,15pF  
CC  
Operating voltage range: V  
5.5-V tolerant inputs.  
= 0.9~3.6 V  
CC  
3.6-V power down protection output.  
Weight: 0.006 g (typ.)  
Marking  
Pin Assignment (top view)  
Product name  
IN B  
IN A  
GND  
V
CC  
1
2
3
5
W 8  
OUT Y  
4
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Power supply voltage  
Symbol  
Value  
Unit  
V
V
0.5~4.6  
0.5~7.0  
CC  
DC input voltage  
V
V
IN  
0.5~ 4.6 (Note 1)  
DC output voltage  
V
V
OUT  
0.5~ V  
+ 0.5 (Note 2)  
CC  
Input diode current  
Output diode current  
DC output current  
I
20  
mA  
mA  
mA  
mA  
mW  
°C  
IK  
I
20 (Note 3)  
±25  
OK  
I
OUT  
DC V /ground current  
CC  
I
±50  
CC  
Power dissipation  
P
200  
D
Storage temperature  
T
stg  
65~150  
Note:  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if  
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings and the operating ranges.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
Note 1:  
Note 2:  
Note 3:  
V
= 0V  
CC  
High or Low State. I  
abusolute maximum rating must be observed.  
OUT  
V
OUT  
< GND  
1
2007-11-01  

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