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TC55V8512J-12 PDF预览

TC55V8512J-12

更新时间: 2024-09-18 22:08:55
品牌 Logo 应用领域
东芝 - TOSHIBA 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
10页 163K
描述
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

TC55V8512J-12 技术参数

生命周期:Obsolete零件包装代码:SOJ
包装说明:SOJ, SOJ36,.44针数:36
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.8
Is Samacsys:N最长访问时间:12 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-J36
JESD-609代码:e0长度:23.5 mm
内存密度:4194304 bit内存集成电路类型:CACHE SRAM
内存宽度:8功能数量:1
端子数量:36字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:512KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:SOJ
封装等效代码:SOJ36,.44封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
电源:3.3 V认证状态:Not Qualified
座面最大高度:3.7 mm最大待机电流:0.004 A
最小待机电流:3 V子类别:SRAMs
最大压摆率:0.17 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:TIN LEAD
端子形式:J BEND端子节距:1.27 mm
端子位置:DUAL宽度:10.16 mm
Base Number Matches:1

TC55V8512J-12 数据手册

 浏览型号TC55V8512J-12的Datasheet PDF文件第2页浏览型号TC55V8512J-12的Datasheet PDF文件第3页浏览型号TC55V8512J-12的Datasheet PDF文件第4页浏览型号TC55V8512J-12的Datasheet PDF文件第5页浏览型号TC55V8512J-12的Datasheet PDF文件第6页浏览型号TC55V8512J-12的Datasheet PDF文件第7页 
TC55V8512J/FT-12,-15  
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS  
524,288-WORD BY 8-BIT CMOS STATIC RAM  
DESCRIPTION  
The TC55V8512J/FT is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 524,288  
words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it  
operates from a single 3.3 V power supply. Chip enable (CE ) can be used to place the device in a low-power mode,  
and output enable ( OE ) provides fast memory access. This device is well suited to cache memory applications  
where high-speed access and high-speed storage are required. All inputs and outputs are directly LVTTL  
compatible. The TC55V8512J/FT is available in plastic 36-pin SOJ and 44-pin TSOP with 400mil width for high  
density surface assembly.  
FEATURES  
Single power supply voltage of 3.3 V 0.3 V  
Fully static operation  
Fast access time (the following are maximum values)  
TC55V8512J/FT-12:12 ns  
All inputs and outputs are LVTTL compatible  
Output buffer control using OE  
Package:  
TC55V8512J/FT-15:15 ns  
Low-power dissipation  
(the following are maximum values)  
SOJ36-P-400-1.27 (J)  
(Weight: 1.35 g typ)  
(Weight: 0.45 g typ)  
Cycle Time  
12  
15  
20  
25  
ns  
TSOP II44-P-400-0.80 (FT)  
Operation (max) 170 140 130 110 mA  
Standby:4 mA (both devices)  
PIN ASSIGNMENT (TOP VIEW)  
36 PIN SOJ 44 PIN TSOP  
PIN NAMES  
A0 to A18  
Address Inputs  
NC  
NC  
A17  
A3  
1
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
NC  
NC  
NC  
A4  
A5  
A6  
A7  
2
I/O1 to I/O8 Data Inputs/Outputs  
3
4
CE  
WE  
OE  
Chip Enable Input  
Write Enable Input  
Output Enable Input  
Power (+3.3 V)  
Ground  
A17  
1
2
3
4
5
6
7
8
9
36 NC  
35 A4  
34 A5  
33 A6  
32 A7  
A2  
5
A3  
A2  
A1  
A0  
A1  
A0  
6
7
8
CE  
I/O1  
I/O2  
VDD  
GND  
I/O3  
I/O4  
OE  
9
I/O8  
I/O7  
GND  
VDD  
I/O6  
I/O5  
A8  
31  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
CE  
OE  
I/O1  
30 I/O8  
29 I/O7  
28 GND  
27 VDD  
26 I/O6  
25 I/O5  
24 A8  
V
DD  
I/O2  
VDD  
GND  
NC  
GND 10  
I/O3 11  
I/O4 12  
WE  
A16  
A15  
A14  
A13  
A18  
NC  
No Connection  
Not Usable (Input)  
A9  
13  
A10  
A11  
A12  
NU  
WE  
NU  
A16 14  
A15 15  
A14 16  
A13 17  
A18 18  
23 A9  
22 A10  
21 A11  
20 A12  
19 NU  
NC  
NC  
NC  
(TC55V8512J)  
(TC55V8512FT)  
2001-12-19 1/10  

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