5秒后页面跳转
SUM40UFTX PDF预览

SUM40UFTX

更新时间: 2024-02-01 01:02:07
品牌 Logo 应用领域
SSDI 高压
页数 文件大小 规格书
2页 62K
描述
Rectifier Diode, 1 Element, 0.4A, 4000V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2

SUM40UFTX 技术参数

生命周期:Active包装说明:E-XALF-W2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.65其他特性:METALLURGICALLY BONDED
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:E-XALF-W2元件数量:1
端子数量:2最大输出电流:0.4 A
封装主体材料:UNSPECIFIED封装形状:ELLIPTICAL
封装形式:LONG FORM认证状态:Not Qualified
最大重复峰值反向电压:4000 V最大反向恢复时间:0.06 µs
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

SUM40UFTX 数据手册

 浏览型号SUM40UFTX的Datasheet PDF文件第2页 
PRELIMINARY  
SUM20F & FSMS  
thru  
SUM50F & FSMS  
SOLID STATE DEVICES, INC.  
14830 Valley View Blvd * La Mirada, Ca 90638  
Phone: (562) 404-7855 * Fax: (562) 404-1773  
0.5 AMPS  
2000 - 5000 VOLTS  
180 nsec  
1.30  
Designer's Data Sheet  
HIGH VOLTAGE  
RECTIFIER  
FEATURES:  
• Fast Recovery: 180 nsec Maximum  
• PIV to 5000 Volts  
• Hermetically Sealed Axial and Surface Mount Package  
• Void-Free Construction  
AXIAL  
SURFACE MOUNT  
SQUARE TAB  
• Metallurgically Bonded  
o
• 175 C Maximum Operating Temperature  
• TX, TXV, and Space Level Screening Available  
ELECTRICAL CHARACHTERISTICS  
Maximum Maximum  
Peak  
Inverse  
Voltage  
Average  
Rectified  
Current  
Maximum  
Reverse  
Current  
Maximum  
Forward  
Voltage  
Maximum  
Junction  
Capacitance Impedance  
Typical  
Thermal  
Part  
Number  
Surge  
Current  
(1 Cycle)  
Reverse  
Recovery  
Time  
PIV  
I
I
V
I
t
C
2 /2  
Symbol  
Units  
O
R
F
FSM  
RR  
J
JL JE  
o
Volts  
mA  
:A  
Volts  
Amps  
nsec  
pF  
VR = 100V  
fT = 1MHZ  
C/W  
o
o
o
o
o
o
o
Conditions  
25 C 100 C 25 C 100 C  
25 C  
25 C  
25 C  
L = 3/8"  
SUM20F  
SUM25F  
SUM30F  
SUM35F  
SUM40F  
2000  
2500  
3000  
3500  
4000  
5000  
500  
500  
500  
500  
500  
500  
300  
300  
300  
300  
300  
300  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
15  
15  
15  
15  
15  
15  
8
25  
25  
25  
25  
25  
25  
180  
180  
180  
180  
180  
180  
10  
10  
10  
10  
10  
10  
16  
8
16  
16  
16  
16  
16  
11  
11  
11  
11  
SUM50F  
NOTES:  
1. Operating and testing over 10,000 V/inch may require encapsulation or immersion in suitable dielectric material.  
2. Maximum forward voltage measured with instantaneous forward pulse of 300:sec minimum.  
o
3. Maximum lead/end tab temperature for soldering is 250 C, 3/8" from case for 5 sec maximum.  
o
4. Operating and Storage temperature: -65 to +175 C.  
o
5. Reverse Recovery Test Conditions: I = 0.5A, I = 1.0A, I = 0.25A, T = 25 C.  
F
R
RR  
A
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET # : RC0038A  

与SUM40UFTX相关器件

型号 品牌 获取价格 描述 数据表
SUM40UFTXV SSDI

获取价格

Rectifier Diode, 1 Element, 0.4A, 4000V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2
SUM45N25-58 VISHAY

获取价格

N-Channel 250-V (D-S), 175 Degrees Celcious, MOSFET
SUM45N25-58_08 VISHAY

获取价格

N-Channel 250-V (D-S) 175 °C MOSFET
SUM45N25-58-E3 VISHAY

获取价格

N-Channel 250-V (D-S) 175 °C MOSFET
SUM47N10-24L VISHAY

获取价格

N-Channel 100-V (D-S) 175 Degree Celcious MOSFET
SUM47N10-24L-E3 VISHAY

获取价格

N-Channel 100-V (D-S) 175 Degree Celcious MOSFET
SUM50010E VISHAY

获取价格

N-Channel 60 V (D-S) MOSFET
SUM50020E VISHAY

获取价格

N-Channel 60 V (D-S) MOSFET
SUM50020EL VISHAY

获取价格

N-Channel 60 V (D-S) MOSFET
SUM50020EL-GE3 VISHAY

获取价格

Power Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, M