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SUM50020EL-GE3 PDF预览

SUM50020EL-GE3

更新时间: 2024-11-29 21:10:55
品牌 Logo 应用领域
威世 - VISHAY 开关脉冲晶体管
页数 文件大小 规格书
9页 189K
描述
Power Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TO-263, D2PAK-3/2

SUM50020EL-GE3 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:12 weeks
风险等级:5.65雪崩能效等级(Eas):281 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):120 A最大漏源导通电阻:0.0021 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):300 A
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SUM50020EL-GE3 数据手册

 浏览型号SUM50020EL-GE3的Datasheet PDF文件第2页浏览型号SUM50020EL-GE3的Datasheet PDF文件第3页浏览型号SUM50020EL-GE3的Datasheet PDF文件第4页浏览型号SUM50020EL-GE3的Datasheet PDF文件第5页浏览型号SUM50020EL-GE3的Datasheet PDF文件第6页浏览型号SUM50020EL-GE3的Datasheet PDF文件第7页 
SUM50020EL  
Vishay Siliconix  
www.vishay.com  
N-Channel 60 V (D-S) MOSFET  
FEATURES  
• TrenchFET® power MOSFET  
PRODUCT SUMMARY  
VDS (V)  
RDS(on) (Ω) MAX.  
ID (A) d  
120  
Qg (TYP.)  
• Maximum 175 °C junction temperature  
• Qgd/Qgs ratio < 0.25  
0.0021 at VGS = 10 V  
0.0026 at VGS = 4.5 V  
60  
126  
120  
• Operable with logic-level gate drive  
• 100 % Rg and UIS tested  
TO-263  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
APPLICATIONS  
D
• Power supply  
- Secondary synchronous rectification  
• DC/DC converter  
S
• Power tools  
G
D
• Motor drive switch  
• DC/AC inverter  
G
Top View  
Ordering Information:  
SUM50020EL-GE3 (lead (Pb)-free and halogen-free)  
• Battery management  
S
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
60  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
20  
T
C = 25 °C  
C = 70 °C  
120 d  
120 d  
300  
Continuous Drain Current (TJ = 150 °C)  
ID  
T
A
Pulsed Drain Current (t = 100 μs)  
Avalanche Current  
IDM  
IAS  
75  
L = 0.1 mH  
Single Avalanche Energy a  
EAS  
281  
mJ  
W
TC = 25 °C  
375 b  
125 b  
-55 to +175  
Maximum Power Dissipation a  
PD  
TC = 125 °C  
Operating Junction and Storage Temperature Range  
TJ, Tstg  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
SYMBOL  
RthJA  
LIMIT  
40  
UNIT  
Junction-to-Ambient (PCB Mount) c  
°C/W  
Junction-to-Case (Drain)  
RthJC  
0.4  
Notes  
a. Duty cycle 1 %.  
b. See SOA curve for voltage derating.  
c. When mounted on 1" square PCB (FR4 material).  
d. Package limited.  
S15-1868-Rev. A, 10-Aug-15  
Document Number: 68587  
1
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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