Datasheet > SUM60030E

SUM60030E

更新时间： 2024-11-30 01:15:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	191K
描述
N-Channel 80 V (D-S) MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SUM60030E 数据手册

SUM60030E

Vishay Siliconix

www.vishay.com

N-Channel 80 V (D-S) MOSFET

FEATURES

• TrenchFET^®power MOSFET

PRODUCT SUMMARY

V_DS(V)

R_DS(on)(Ω) MAX.

I_D(A) ^d

120

Q_g(TYP.)

• Maximum 175 °C junction temperature

0.0032 at V_GS= 10 V

0.0034 at V_GS= 7.5 V

• Very low Q_gdreduces power loss from passing

through V_plateau

120

• 100 % R_gand UIS tested

TO-263

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Power supply

- Secondary synchronous rectification

• DC/DC converter

• Power tools

• Motor drive switch

• DC/AC inverter

Top View

Ordering Information:

SUM60030E-GE3 (lead (Pb)-free and halogen-free)

• Battery management

• ORing / e-fuse

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

_C= 70 °C

120 ^d

250

Continuous Drain Current (T_J= 150 °C)

I_D

Pulsed Drain Current (t = 100 μs)

Avalanche Current

I_DM

I_AS

Single Avalanche Energy ^a

L = 0.1 mH

T_C= 25 °C

T_C= 125 °C

E_AS

245

375 ^b

125 ^b

-55 to +175

Maximum Power Dissipation ^a

P_D

Operating Junction and Storage Temperature Range

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

UNIT

Junction-to-Ambient (PCB Mount) ^c

°C/W

Junction-to-Case (Drain)

R_thJC

0.4

Notes

a. Duty cycle ≤ 1 %.

b. See SOA curve for voltage derating.

c. When mounted on 1" square PCB (FR4 material).

d. Package limited.

S15-1869-Rev. A, 10-Aug-15

Document Number: 67984

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...10

中文翻译

下载PDF

与SUM60030E相关器件

型号	品牌	获取价格	描述	数据表
SUM60030E-GE3	VISHAY	获取价格	N-Channel 80 V (D-S) MOSFET
SUM60061EL	VISHAY	获取价格	P-Channel 80 V (D-S) MOSFET
SUM60F	SSDI	获取价格	500 mA 6,000 thru 9,000 VOLTS 180 ns FAST RECOVERY RECTIFIER
SUM60F_1	SSDI	获取价格	180 FAST RECOVERY RECTIFIER
SUM60FS	SSDI	获取价格	Rectifier Diode, 1 Element, 0.5A, Silicon, AXIAL, 2 PIN
SUM60FSMS	SSDI	获取价格	500 mA 6,000 thru 9,000 VOLTS 180 ns FAST RECOVERY RECTIFIER
SUM60FSMSTX	SSDI	获取价格	Rectifier Diode, 1 Element, 0.5A, Silicon, SMS, 2 PIN
SUM60FSMSTXV	SSDI	获取价格	Rectifier Diode, 1 Element, 0.5A, Silicon, SMS, 2 PIN
SUM60FTX	SSDI	获取价格	Rectifier Diode, 1 Element, 0.5A, Silicon, AXIAL, 2 PIN
SUM60N02-3M9P	VISHAY	获取价格	N-Channel 20-V (D-S) 175 °C MOSFET