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SUM60N08-07T PDF预览

SUM60N08-07T

更新时间: 2024-09-26 06:14:59
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
5页 46K
描述
MOSFET SPECIFICATIONS (TJ = 25 C UNLESS OTHERWISE NOTED)

SUM60N08-07T 技术参数

是否Rohs认证:不符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.91Is Samacsys:N
配置:Single最大漏极电流 (Abs) (ID):60 A
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-609代码:e0
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):300 W
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

SUM60N08-07T 数据手册

 浏览型号SUM60N08-07T的Datasheet PDF文件第2页浏览型号SUM60N08-07T的Datasheet PDF文件第3页浏览型号SUM60N08-07T的Datasheet PDF文件第4页浏览型号SUM60N08-07T的Datasheet PDF文件第5页 
SUM60N08-07T  
Vishay Siliconix  
New Product  
N-Channel 75-V (D-S) MOSFET with Sensing Diode  
FEATURES  
D TrenchFETr Power MOSFET Plus  
Temperature Sensing Diode  
PRODUCT SUMMARY  
D New Low Thermal Resistance Package  
APPLICATIONS  
V(BR)DSS (V)  
rDS(on) (W)  
ID (A)  
a
75  
0.007 @ V = 10 V  
GS  
60  
D Automotive  
D Industrial  
D
2
D PAK-5L  
T
T
1
2
D
1
D
2
G
1 2 3 4 5  
S
N-Channel MOSFET  
G
D
S
T
2
T
1
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
C
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
75  
DS  
V
GS  
"20  
V
a
T
= 25_C  
= 100_C  
60  
C
d
Continuous Drain Current (T = 175_C)  
I
J
D
a
T
60  
C
A
Pulsed Drain Current  
I
240  
DM  
d
a
Continous Diode Current (Diode Conduction)  
I
S
60  
a
Avalanche Current  
I
60  
AR  
b
Repetitive Avalanche Energy  
L = 0.1 mH  
E
AR  
180  
mJ  
c
T
= 25_C  
= 25_C  
300  
C
a
Maximum Power Dissipation  
P
W
D
d
T
3.75  
A
Operating Junction and Storage Temperature Range  
T , T  
J
–55 to 175  
_C  
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Limit  
Unit  
d
d
Junction-to-Ambient  
PCB Mount  
R
40  
thJA  
thJC  
_
C/W  
Junction-to-Case  
R
0.5  
Notes  
a. Package limited.  
b. Duty cycle v 1%.  
c. See SOA curve for voltage derating.  
d. When mounted on 1” square PCB (FR-4 material).  
Document Number: 71833  
S-20174—Rev. A, 18-Mar-02  
www.vishay.com  
1

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