生命周期: | Active | 包装说明: | E-LELF-R2 |
针数: | 2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.70 |
风险等级: | 5.66 | 其他特性: | METALLURGICALLY BONDED |
外壳连接: | ISOLATED | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
最大正向电压 (VF): | 13 V | JESD-30 代码: | E-LELF-R2 |
最大非重复峰值正向电流: | 25 A | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 175 °C |
最低工作温度: | -65 °C | 最大输出电流: | 0.5 A |
封装主体材料: | GLASS | 封装形状: | ELLIPTICAL |
封装形式: | LONG FORM | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 6000 V | 最大反向恢复时间: | 0.18 µs |
子类别: | Rectifier Diodes | 表面贴装: | YES |
端子形式: | WRAP AROUND | 端子位置: | END |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SUM60FSMSTX | SSDI |
获取价格 |
Rectifier Diode, 1 Element, 0.5A, Silicon, SMS, 2 PIN | |
SUM60FSMSTXV | SSDI |
获取价格 |
Rectifier Diode, 1 Element, 0.5A, Silicon, SMS, 2 PIN | |
SUM60FTX | SSDI |
获取价格 |
Rectifier Diode, 1 Element, 0.5A, Silicon, AXIAL, 2 PIN | |
SUM60N02-3M9P | VISHAY |
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N-Channel 20-V (D-S) 175 °C MOSFET | |
SUM60N02-3M9P-E3 | VISHAY |
获取价格 |
N-Channel 20-V (D-S) 175 °C MOSFET | |
SUM60N04-05C | VISHAY |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
SUM60N04-05C-E3 | VISHAY |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
SUM60N04-05LT | VISHAY |
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N-Channel 40-V (D-S) MOSFET with Sensing Diode | |
SUM60N04-05T | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
SUM60N04-05T-E3 | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |