SUM60N02-3M9P-E3 PDF预览

SUM60N02-3M9P-E3

更新时间: 2025-08-02 06:14:55
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管脉冲
页数 文件大小 规格书
6页 117K
描述
N-Channel 20-V (D-S) 175 °C MOSFET

SUM60N02-3M9P-E3 技术参数

生命周期:Obsolete零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:8.42Is Samacsys:N
雪崩能效等级(Eas):125 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):60 A最大漏极电流 (ID):60 A
最大漏源导通电阻:0.0052 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):120 W
最大脉冲漏极电流 (IDM):120 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管元件材料:SILICONBase Number Matches:1

SUM60N02-3M9P-E3 数据手册

 浏览型号SUM60N02-3M9P-E3的Datasheet PDF文件第2页浏览型号SUM60N02-3M9P-E3的Datasheet PDF文件第3页浏览型号SUM60N02-3M9P-E3的Datasheet PDF文件第4页浏览型号SUM60N02-3M9P-E3的Datasheet PDF文件第5页浏览型号SUM60N02-3M9P-E3的Datasheet PDF文件第6页 
SUM60N02-3m9P  
Vishay Siliconix  
N-Channel 20-V (D-S) 175 °C MOSFET  
FEATURES  
PRODUCT SUMMARY  
TrenchFET® Power MOSFET  
175 °C Junction Temperature  
100 % Rg Tested  
I
D (A)a  
V(BR)DSS (V)  
rDS(on) (Ω)  
RoHS  
0.0039 at VGS = 10 V  
0.0052 at VGS = 4.5 V  
60  
60  
COMPLIANT  
20  
100 % UIS Tested  
APPLICATIONS  
OR-ing  
D
TO-263  
G
DRAIN connected to TAB  
G
D S  
Top View  
S
N-Channel MOSFET  
Ordering Information: SUM60N02-3m9P-E3 (Lead (Pb)-free)  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
Limit  
20  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
20  
60a  
TC = 25 °C  
Continuous Drain Current (TJ = 175 °C)  
ID  
60a  
120  
50  
TC = 100 °C  
A
IDM  
IAS  
Pulsed Drain Current  
Single Pulse Avalanche Current  
Single Pulse Avalanche Energy  
L = 0.1 mH  
TC = 25 °C  
EAS  
125  
mJ  
W
120c  
3.75  
Maximum Power Dissipationb  
PD  
T
A = 25 °Cd  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 175  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Junction-to-Ambient (PCB Mount)d  
Symbol  
Limit  
40  
Unit  
RthJA  
°C/W  
RthJC  
Junction-to-Case  
1.25  
Notes:  
a. Package limited.  
b. Duty cycle 1 %.  
c. See SOA curve for voltage derating.  
d. When mounted on 1" square PCB (FR-4 material).  
Document Number: 69820  
S-80183-Rev. A, 04-Feb-08  
www.vishay.com  
1

与SUM60N02-3M9P-E3相关器件

型号 品牌 获取价格 描述 数据表
SUM60N04-05C VISHAY

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SUM60N04-05C-E3 VISHAY

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SUM60N04-05LT VISHAY

获取价格

N-Channel 40-V (D-S) MOSFET with Sensing Diode
SUM60N04-05T VISHAY

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SUM60N04-05T-E3 VISHAY

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SUM60N04-06T VISHAY

获取价格

N-Channel 40-V (D-S) MOSFET with Sensing Diode
SUM60N04-06T-E3 VISHAY

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SUM60N04-12LT VISHAY

获取价格

Temperature Sensing MOSFET, N-Channel 40-V (D-S)
SUM60N06-15 VISHAY

获取价格

N-Channel 60-V (D-S) 175C MOSFET
SUM60N08-07C VISHAY

获取价格

Current-Sensing Power MOSFETs