Datasheet > SUM6K1N

SUM6K1N

更新时间： 2024-11-30 01:17:59

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
3页	242K
描述
N-Channel Enhancement Mode MOSFET

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中文翻译

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技术参数
数据手册

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SUM6K1N 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
Reach Compliance Code：	compliant	风险等级：	5.84
最大漏极电流 (Abs) (ID)：	0.1 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	0.15 W
子类别：	FET General Purpose Power	表面贴装：	YES

SUM6K1N 数据手册

SUM6K1N

0.1A , 30V , R_DS(ON)8 

N-Channel Enhancement Mode MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

SOT-363

These miniature surface mount MOSFETs utilize a high

cell density trench process to provide low R_DS(on)and to

ensure minimal power loss and heat dissipation.

FEATURES



Low R_DS(on)provides higher efficiency and extends

battery life



Low thermal impedance copper leadframe SOT-363

saves board space

D G



Fast switching speed

High performance trench technology

Millimeter

Min. Max.

0.100 REF.

0.525 REF.

0.08 0.25

REF.

Min.

1.80

1.15

0.80

Max.

2.20

2.45

1.35

1.10

APPLICATION

DC-DC converters and power management in portable

8°

and battery-powered products such as computers, printers,

PCMCIA cards, cellular and cordless telephones.

1.10

0.10

1.50

0.35

0.650 TYP.

MARKING

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOT-363

7 inch

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

V_DS

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current ¹

Power Dissipation ¹

±20

V_GSS

I_D

0.1

P_D

0.15

Maximum Junction to Ambient ¹

R_

833

°C / W

°C

Operating Junction and Storage Temperature Range

T_J, T_STG

150, -55~150

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

24-Sep-2013 Rev. B

Page 1 of 3

12 3

中文翻译

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