Datasheet > SUM50020E

SUM50020E

更新时间： 2024-11-30 14:52:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	185K
描述
N-Channel 60 V (D-S) MOSFET

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SUM50020E 数据手册

SUM50020E

Vishay Siliconix

www.vishay.com

N-Channel 60 V (D-S) MOSFET

FEATURES

• TrenchFET^®power MOSFET

TO-263

• Maximum 175 °C junction temperature

• Q_gd/Q_gsratio < 0.25

• Operable with logic-level gate drive

• 100 % R_gand UIS tested

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

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APPLICATIONS

• Power supply

- Secondary synchronous rectification

PRODUCT SUMMARY

V_DS(V)

• DC/DC converter

• Power tools

_DS(on)max. () at V_GS= 10 V

_DS(on)max. () at V_GS= 7.5 V

0.0022

0.0024

128

• Motor drive switch

• DC/AC inverter

• Battery management

Q_gtyp. (nC)

_D(A)

120 ^d

N-Channel MOSFET

Configuration

Single

ORDERING INFORMATION

Package

TO-263

SUM50020E-GE3

Lead (Pb)-free and halogen-free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

_C= 25 °C

_C= 70 °C

120 ^d

300

Continuous drain current (T_J= 150 °C)

I_D

Pulsed drain current (t = 100 μs)

Avalanche current

I_DM

I_AS

L = 0.1 mH

Single avalanche energy ^a

E_AS

281

T_C= 25 °C

375 ^b

125 ^b

-55 to +175

Maximum power dissipation ^a

P_D

T_C= 125 °C

Operating junction and storage temperature range

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

UNIT

Junction-to-ambient (PCB mount) ^c

°C/W

Junction-to-case (drain)

R_thJC

0.4

Notes

a. Duty cycle  1 %

b. See SOA curve for voltage derating

c. When mounted on 1" square PCB (FR4 material)

d. Package limited

S17-1310-Rev. B, 21-Aug-17

Document Number: 75403

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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