Datasheet > SUM50020E

SUM50020E

更新时间： 2024-09-27 14:52:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	185K
描述
N-Channel 60 V (D-S) MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SUM50020E 数据手册

SUM50020E

Vishay Siliconix

www.vishay.com

N-Channel 60 V (D-S) MOSFET

FEATURES

• TrenchFET^®power MOSFET

TO-263

• Maximum 175 °C junction temperature

• Q_gd/Q_gsratio < 0.25

• Operable with logic-level gate drive

• 100 % R_gand UIS tested

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Top View

APPLICATIONS

• Power supply

- Secondary synchronous rectification

PRODUCT SUMMARY

V_DS(V)

• DC/DC converter

• Power tools

_DS(on)max. () at V_GS= 10 V

_DS(on)max. () at V_GS= 7.5 V

0.0022

0.0024

128

• Motor drive switch

• DC/AC inverter

• Battery management

Q_gtyp. (nC)

_D(A)

120 ^d

N-Channel MOSFET

Configuration

Single

ORDERING INFORMATION

Package

TO-263

SUM50020E-GE3

Lead (Pb)-free and halogen-free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

_C= 25 °C

_C= 70 °C

120 ^d

300

Continuous drain current (T_J= 150 °C)

I_D

Pulsed drain current (t = 100 μs)

Avalanche current

I_DM

I_AS

L = 0.1 mH

Single avalanche energy ^a

E_AS

281

T_C= 25 °C

375 ^b

125 ^b

-55 to +175

Maximum power dissipation ^a

P_D

T_C= 125 °C

Operating junction and storage temperature range

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

UNIT

Junction-to-ambient (PCB mount) ^c

°C/W

Junction-to-case (drain)

R_thJC

0.4

Notes

a. Duty cycle  1 %

b. See SOA curve for voltage derating

c. When mounted on 1" square PCB (FR4 material)

d. Package limited

S17-1310-Rev. B, 21-Aug-17

Document Number: 75403

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

中文翻译

下载PDF

与SUM50020E相关器件

型号	品牌	获取价格	描述	数据表
SUM50020EL	VISHAY	获取价格	N-Channel 60 V (D-S) MOSFET
SUM50020EL-GE3	VISHAY	获取价格	Power Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, M
SUM50F	SSDI	获取价格	0.5 AMPS 2000 - 5000 VOLTS 180 nsec HIGH VOLTAGE RECTIFIER
SUM50FSMSS	SSDI	获取价格	Rectifier Diode, 1 Element, 0.5A, Silicon, HERMETIC SEALED PACKAGE-2
SUM50FSMSTX	SSDI	获取价格	Rectifier Diode, 1 Element, 0.5A, Silicon, HERMETIC SEALED PACKAGE-2
SUM50FSMSTXV	SSDI	获取价格	Rectifier Diode, 1 Element, 0.5A, Silicon, HERMETIC SEALED PACKAGE-2
SUM50FTX	SSDI	获取价格	Rectifier Diode, 1 Element, 0.5A, Silicon, HERMETIC SEALED PACKAGE-2
SUM50FTXV	SSDI	获取价格	Rectifier Diode, 1 Element, 0.5A, Silicon, HERMETIC SEALED PACKAGE-2
SUM50N03	VISHAY	获取价格	SPICE Device Model SUM50N03-13LC
SUM50N03-13LC	VISHAY	获取价格	Current-Sensing Power MOSFETs