Datasheet > SUM45N25-58_08

SUM45N25-58_08

更新时间： 2024-01-25 00:43:53

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	99K
描述
N-Channel 250-V (D-S) 175 °C MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SUM45N25-58_08 数据手册

New Product

SUM45N25-58

Vishay Siliconix

N-Channel 250-V (D-S) 175 °C MOSFET

FEATURES

PRODUCT SUMMARY

•

TrenchFET^®Power MOSFETS

V_(BR)DSS(V)

r_DS(on)(Ω)

I_D(A)

175 °C Junction Temperature

RoHS

0.058 at V_GS= 10 V

0.062 at V_GS= 6 V

250

COMPLIANT

New Low Thermal Resistance Package

APPLICATIONS

•

Primary Side Switch

•

Plasma Display Panel Sustainer Function

TO-263

D S

Top View

Ordering Information: SUM45N25-58-E3 (Lead (Pb)-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

250

300

Unit

V_DS

Drain-Source Voltage

Typical Avalanche Voltage^d

Gate-Source Voltage

_{DS (Avalanche)}Typ

V_GS

T_C= 25 °C

Continuous Drain Current (T_J= 175 °C)

I_D

T_C= 125 °C

I_DM

I_AR

Pulsed Drain Current

Avalanche Current

Repetitive Avalanche Energy^a

E_AR

L = 0.1 mH

T_C= 25 °C

375^b

3.75

Maximum Power Dissipation^a

P_D

_A= 25 °C^c

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Junction-to-Ambient (PCB Mount)^c

Symbol

Limit

Unit

R_thJA

°C/W

R_thJC

Junction-to-Case (Drain)

0.4

Notes:

a. Duty cycle ≤ 1 %.

b. See SOA curve for voltage derating.

c. When Mounted on 1" square PCB (FR-4 material).

d. Guaranteed by design

Document Number: 72314

S-70311-Rev. C, 12-Feb-07

www.vishay.com

12 3 4 5 6

中文翻译

下载PDF

与SUM45N25-58_08相关器件

型号	品牌	获取价格	描述	数据表
SUM45N25-58-E3	VISHAY	获取价格	N-Channel 250-V (D-S) 175 °C MOSFET
SUM47N10-24L	VISHAY	获取价格	N-Channel 100-V (D-S) 175 Degree Celcious MOSFET
SUM47N10-24L-E3	VISHAY	获取价格	N-Channel 100-V (D-S) 175 Degree Celcious MOSFET
SUM50010E	VISHAY	获取价格	N-Channel 60 V (D-S) MOSFET
SUM50020E	VISHAY	获取价格	N-Channel 60 V (D-S) MOSFET
SUM50020EL	VISHAY	获取价格	N-Channel 60 V (D-S) MOSFET
SUM50020EL-GE3	VISHAY	获取价格	Power Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, M
SUM50F	SSDI	获取价格	0.5 AMPS 2000 - 5000 VOLTS 180 nsec HIGH VOLTAGE RECTIFIER
SUM50FSMSS	SSDI	获取价格	Rectifier Diode, 1 Element, 0.5A, Silicon, HERMETIC SEALED PACKAGE-2
SUM50FSMSTX	SSDI	获取价格	Rectifier Diode, 1 Element, 0.5A, Silicon, HERMETIC SEALED PACKAGE-2