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SUM47N10-24L PDF预览

SUM47N10-24L

更新时间: 2024-11-28 21:53:55
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 66K
描述
N-Channel 100-V (D-S) 175 Degree Celcious MOSFET

SUM47N10-24L 数据手册

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SUM47N10-24L  
Vishay Siliconix  
New Product  
N-Channel 100-V (D-S) 175_C MOSFET  
FEATURES  
D TrenchFETr Power MOSFET  
PRODUCT SUMMARY  
D 175_C Maximum Junction Temperature  
VDS (V)  
rDS(on) (W)  
ID (A)  
D 100% Rg Tested  
APPLICATIONS  
0.024 @ V = 10 V  
GS  
47  
44  
100  
0.027 @ V = 4.5 V  
GS  
D Automotive Such As:  
HID Lamp  
Ignition Systems  
Injection Systems  
D
TO-263  
G
G
D S  
Top View  
S
Ordering Information: SUM47N10-24L—E3  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
100  
"20  
47  
DS  
GS  
V
V
T
= 25_C  
= 125_C  
C
b
Continuous Drain Current (T = 175_C)  
I
D
J
T
27  
C
Pulsed Drain Current  
I
70  
A
DM  
Continuous Source Current (Diode Conduction)  
Single Pulse Avalanche Current  
I
47  
S
I
As  
40  
Single Pulse Avalanche Energy (Duty Cycle v 1%)  
L = 0.1 mH  
E
As  
80  
mJ  
b
T
= 25_C  
= 25_C  
136  
C
Maximum Power Dissipation  
P
D
W
a
T
3.75  
A
Operating Junction and Storage Temperature Range  
T , T  
55 to 175  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Maximum  
Unit  
PCB Mount  
Free Air  
40  
62.5  
1.1  
Junction-to-Ambient  
Junction-to-Case  
R
thJA  
R
thJC  
_C/W  
Notes  
a. Surface Mounted on 1” x1” FR4 Board.  
b. See SOA curve for voltage derating.  
Document Number: 72827  
S-40434—Rev. A, 15-Mar-04  
www.vishay.com  
1

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