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SUM45N25-58-E3 PDF预览

SUM45N25-58-E3

更新时间: 2024-02-19 12:29:25
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管开关脉冲PC
页数 文件大小 规格书
6页 99K
描述
N-Channel 250-V (D-S) 175 °C MOSFET

SUM45N25-58-E3 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:D2PAK包装说明:SMALL OUTLINE, R-PSSO-G2
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:0.97
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:184386Samacsys Pin Count:4
Samacsys Part Category:TransistorSamacsys Package Category:TO-XXX (Inc. DPAK)
Samacsys Footprint Name:TO-263(D2PAK) 3-LEADSamacsys Released Date:2015-10-07 02:11:06
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:250 V最大漏极电流 (Abs) (ID):45 A
最大漏极电流 (ID):45 A最大漏源导通电阻:0.058 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):375 W最大脉冲漏极电流 (IDM):90 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SUM45N25-58-E3 数据手册

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New Product  
SUM45N25-58  
Vishay Siliconix  
N-Channel 250-V (D-S) 175 °C MOSFET  
FEATURES  
PRODUCT SUMMARY  
TrenchFET® Power MOSFETS  
V(BR)DSS (V)  
rDS(on) (Ω)  
ID (A)  
45  
175 °C Junction Temperature  
RoHS  
0.058 at VGS = 10 V  
0.062 at VGS = 6 V  
250  
COMPLIANT  
New Low Thermal Resistance Package  
43  
APPLICATIONS  
Primary Side Switch  
Plasma Display Panel Sustainer Function  
D
TO-263  
G
G
D S  
Top View  
Ordering Information: SUM45N25-58-E3 (Lead (Pb)-free)  
S
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
C
Parameter  
Symbol  
Limit  
250  
300  
30  
Unit  
VDS  
Drain-Source Voltage  
Typical Avalanche Voltaged  
Gate-Source Voltage  
V
DS (Avalanche)Typ  
VGS  
V
TC = 25 °C  
45  
Continuous Drain Current (TJ = 175 °C)  
ID  
TC = 125 °C  
25  
A
IDM  
IAR  
Pulsed Drain Current  
Avalanche Current  
90  
35  
Repetitive Avalanche Energya  
EAR  
L = 0.1 mH  
TC = 25 °C  
61  
mJ  
W
375b  
3.75  
Maximum Power Dissipationa  
PD  
T
A = 25 °Cc  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 175  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Junction-to-Ambient (PCB Mount)c  
Symbol  
Limit  
40  
Unit  
RthJA  
°C/W  
RthJC  
Junction-to-Case (Drain)  
0.4  
Notes:  
a. Duty cycle 1 %.  
b. See SOA curve for voltage derating.  
c. When Mounted on 1" square PCB (FR-4 material).  
d. Guaranteed by design  
Document Number: 72314  
S-70311-Rev. C, 12-Feb-07  
www.vishay.com  
1

SUM45N25-58-E3 替代型号

型号 品牌 替代类型 描述 数据表
SUM18N25-165-E3 VISHAY

类似代替

N-Channel 250-V (D-S) 175 °C MOSFET
SUM45N25-58 VISHAY

功能相似

N-Channel 250-V (D-S), 175 Degrees Celcious, MOSFET

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