5秒后页面跳转
SUM110N08-07P PDF预览

SUM110N08-07P

更新时间: 2024-02-22 19:13:41
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 122K
描述
N-Channel 75-V (D-S) MOSFET

SUM110N08-07P 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.88Is Samacsys:N
配置:Single最大漏极电流 (Abs) (ID):110 A
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-609代码:e0
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):230 W
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

SUM110N08-07P 数据手册

 浏览型号SUM110N08-07P的Datasheet PDF文件第2页浏览型号SUM110N08-07P的Datasheet PDF文件第3页浏览型号SUM110N08-07P的Datasheet PDF文件第4页浏览型号SUM110N08-07P的Datasheet PDF文件第5页浏览型号SUM110N08-07P的Datasheet PDF文件第6页 
SUM110N08-07P  
Vishay Siliconix  
N-Channel 75-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
TrenchFET® Power MOSFETS  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
Qg (Typ.)  
100 % Rg and UIS Tested  
110d  
0.007 at VGS = 10 V  
RoHS  
75  
69  
COMPLIANT  
APPLICATIONS  
Synchronous Rectification  
D
TO-263  
G
G
D S  
Top View  
S
N-Channel MOSFET  
Ordering Information: SUM110N08-07P-E3 (Lead (Pb)-free)  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
C
Parameter  
Symbol  
Limit  
75  
20  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
110d  
TC = 25 °C  
TC = 70 °C  
Continuous Drain Current (TJ = 150 °C)  
ID  
103  
180  
50  
A
IDM  
IAS  
Pulsed Drain Current  
Avalanche Current  
Single Avalanche Energya  
EAS  
L = 0.1 mH  
TC = 25 °C  
125  
mJ  
W
208.3b  
3.75  
Maximum Power Dissipationa  
PD  
T
A = 25 °Cc  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Junction-to-Ambient (PCB Mount)c  
Symbol  
Limit  
40  
Unit  
RthJA  
°C/W  
RthJC  
Junction-to-Case (Drain)  
0.6  
Notes:  
a. Duty cycle 1 %.  
b. See SOA curve for voltage derating.  
c. When Mounted on 1" square PCB (FR-4 material).  
d. Package limited.  
Document Number: 68637  
S-81049-Rev. A, 12-May-08  
www.vishay.com  
1

与SUM110N08-07P相关器件

型号 品牌 获取价格 描述 数据表
SUM110N08-07P-E3 VISHAY

获取价格

N-Channel 75-V (D-S) MOSFET
SUM110N08-10 VISHAY

获取价格

N-Channel 75-V (D-S) MOSFET
SUM110N08-10-E3 VISHAY

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SUM110N10-09 VISHAY

获取价格

N-Channel 100-V (D-S) 200C MOSFET
SUM110N10-09-E3 VISHAY

获取价格

N-Channel 100-V (D-S) 200C MOSFET
SUM110P04-04L VISHAY

获取价格

P-Channel 40-V (D-S) 175-LC MOSFET
SUM110P04-04L-E3 VISHAY

获取价格

P-Channel 40-V (D-S) 175 °C MOSFET
SUM110P04-05 VISHAY

获取价格

P-Channel 40-V (D-S) MOSFET
SUM110P04-05_08 VISHAY

获取价格

P-Channel 40-V (D-S) MOSFET
SUM110P04-05-E3 VISHAY

获取价格

P-Channel 40-V (D-S) MOSFET