Datasheet > SUM110P04-05_08

SUM110P04-05_08

更新时间： 2024-11-26 06:14:55

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威世 - VISHAY		/
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描述
P-Channel 40-V (D-S) MOSFET

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SUM110P04-05_08 数据手册

SUM110P04-05

Vishay Siliconix

P-Channel 40-V (D-S) MOSFET

FEATURES

•

PRODUCT SUMMARY

TrenchFET^®Power MOSFET

_D(A)^a

V_DS(V)

r_DS(on)(Ω)

Q_g(Typ.)

RoHS

0.005 at V_GS= - 10 V

- 40

- 110

185 nC

COMPLIANT

TO-263

Drain Connected to Tab

Top View

Ordering Information: SUM110P04-05-E3 (Lead (Pb)-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

- 40

V_GS

- 110^a

39^{b, c}

T_C= 25 °C

_C= 70 °C

Continuous Drain Current (T_J= 175 °C)

I_D

T_A= 25 °C

T_A= 70 °C

33^{b, c}

I_DM

I_S

Pulsed Drain Current

240

T_C= 25 °C

T_A= 25 °C

110

Continuous Source-Drain Diode Current

10^{b, c}

I_AS

Avalanche Current

L = 0.1 mH

T_C= 25 °C

E_AS

Single-Pulse Avalanche Energy

281

375

262

_C= 70 °C

_A= 25 °C

P_D

Maximum Power Dissipation

15^{b, c}

10.5^{b, c}

- 55 to 175

260

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambient^{b, d}

R_thJA

t ≤ 10 s

°C/W

R_thJC

Maximum Junction-to-Case (Drain)

Steady State

0.33

0.4

Notes:

a. Package limited.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 40 °C/W.

Document Number: 73493

S-80274-Rev. B, 11-Feb-08

www.vishay.com

12 3 4 5 6

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