Datasheet > SUM110P06-07L_08

SUM110P06-07L_08

更新时间： 2024-09-26 06:14:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	116K
描述
P-Channel 60-V (D-S) 175 °C MOSFET

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SUM110P06-07L_08 数据手册

SUM110P06-07L

Vishay Siliconix

P-Channel 60-V (D-S) 175 °C MOSFET

FEATURES

•

PRODUCT SUMMARY

TrenchFET^®Power MOSFET

_D(A)^d

- 110

V_DS(V)

r_DS(on)(Ω)

Available

•

Package with Low Thermal Resistance

0.0069 at V_GS= - 10 V

0.0088 at V_GS= - 4.5 V

RoHS*

- 60

COMPLIANT

TO-263

D S

Top View

Ordering Information: SUM110P06-07L

SUM110P06-07L-E3 (Lead (Pb)-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

- 60

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

_C= 25 °C

Continuous Drain Current^d

(T_J= 175 °C)

- 110

- 95

- 240

- 75

281

I_D

T_C= 125 °C

I_DM

I_AS

Pulsed Drain Current

Avalanche Current

Single Pulse Avalanche Energy^a

L = 0.1 mH

T_C= 25 °C

E_AS

375^c

3.75

P_D

Power Dissipation

_A= 25 °C^b

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Unit

Junction-to-Ambient

PCB Mount^b

R_thJA

°C/W

R_thJC

Junction-to-Case

0.4

Notes:

a. Duty cycle ≤ 1 %.

b. When Mounted on 1" square PCB (FR-4 material).

c. See SOA curve for voltage derating.

d. Limited by package.

* Pb containing terminations are not RoHS compliant, exemptions may apply.

Document Number: 72439

S-80274-Rev. C, 11-Feb-08

www.vishay.com

12 3 4 5 6

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