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SUM201MN PDF预览

SUM201MN

更新时间: 2024-11-26 19:46:59
品牌 Logo 应用领域
可天士 - KODENSHI /
页数 文件大小 规格书
9页 420K
描述
SMALL SIGNAL, FET

SUM201MN 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.76
Base Number Matches:1

SUM201MN 数据手册

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SUM201MN  
P-Channel MOSFET + PNP BJT  
Integrated Power MOSFET  
with PNP Low VCE(sat) Switching Transistor  
DFN-8  
This integrated device represents a new level of safety and  
boardspace reduction by combining the 20V PChannel FET with a  
PNP Silicon Low VCE(sat) switching transistor. This newly integrated  
product provides higher efficiency and accuracy for battery powered  
portable electronics.  
MOSFET  
BVDSS  
RDS(ON) Typ.  
ID Max  
48m  
@ VGS=-4.5V  
Features  
-20V  
-5.3A  
65mΩ  
@ VGS=-2.5V  
Low RDS(on) (MOSFET) and Low VCE(sat) (Transistor)  
Higher Efficiency Extending Battery Life  
Logic Level Gate Drive (MOSFET)  
Performance DFN Package  
PNP BJT  
BVCEO  
BVEBO  
.
IC Max  
This is a HalogenFree Device  
-20V  
-5V  
-5A  
Applications  
Power Management in Portable and BatteryPowered Products; i.e.,  
Marking Diagram  
1
Cellular and Cordless Telephones and PCMCIA Cards  
SUM201  
YWW  
Ordering Information  
Device  
Marking  
Package  
Column 1 : Device Code  
Column 2 : Date Code (year, week)  
SUM201MN  
SUM201  
DFN8  
Simple Schematic  
Drain  
Drain  
Source  
8
1
Drain  
2
7
6
5
Gate  
3
Collector  
Collector  
Emitter  
Collector  
4
Base  
Bottom View  
KSD-T6T002-001  
1

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