Datasheet > SUM18N25-165_08

SUM18N25-165_08

更新时间： 2024-11-26 08:58:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	111K
描述
N-Channel 250-V (D-S) 175 °C MOSFET

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SUM18N25-165_08 数据手册

SUM18N25-165

Vishay Siliconix

N-Channel 250-V (D-S) 175 °C MOSFET

FEATURES

PRODUCT SUMMARY

•

TrenchFET^®Power MOSFET

175 °C Junction Temperature

Low Thermal Resistance Package

V_(BR)DSS(V)

_D(A)

r_DS(on)(Ω)

RoHS

0.165 at V_GS= 10 V

250

COMPLIANT

TO-263

D S

Top View

Ordering Information:

SUM18N25-165-E3 (Lead (Pb)-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

250

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_C= 25 °C

Continuous Drain Current (T_J= 175 °C)

I_D

T_C= 125 °C

10.4

I_DM

I_AS

Pulsed Drain Current

Single Pulse Avalanche Current

Single Pulse Avalanche Energy^a

E_AS

L = 0.1 mH

T_C= 25 °C

1.25

150^b

3.75

Maximum Power Dissipation^a

P_D

_A= 25 °C^c

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Limit

Unit

PCB Mount (TO-263)^c

R_thJA

Junction-to-Ambient

°C/W

R_thJC

Junction-to-Case (Drain)

1.0

Notes:

a. Duty cycle ≤ 1 %.

b. See SOA curve for voltage derating.

c. When Mounted on 1" square PCB (FR-4 material).

Document Number: 72849

S-80272-Rev. B, 11-Feb-08

www.vishay.com

12 3 4 5 6

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