Datasheet > SUD15N06-90L_07

SUD15N06-90L_07

更新时间： 2024-11-23 06:14:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	95K
描述
N-Channel 60-V (D-S), 175C MOSFET, Logic Level

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SUD15N06-90L_07 数据手册

SUD15N06-90L

Vishay Siliconix

N-Channel 60-V (D-S), 175_C MOSFET, Logic Level

FEATURES

PRODUCT SUMMARY

Pb-free

Available

D TrenchFETr Power MOSFET

D 175_C Maximum Junction

Temperature

V_DS(V)

r_DS(on)(W)

I_D(A)

0.065 @ V = 10 V

0.090 @ V = 4.5 V

TO-252

Drain Connected to Tab

Top View

N-Channel MOSFET

Ordering Information: SUD15N06-90L

SUD15N06-90L—E3 (Lead (Pb)-Free)

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Gate-Source Voltage

ꢀ20

= 25_C

Continuous Drain Current (T = 175_C)

= 100_C

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Avalanche Current

Repetitive Avalanche Energy (Duty Cycle ꢁ 1%)

L = 0.1 mH

= 25_C

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

−55 to 175

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Junction-to-Ambient Free Air, FR4 Board Mount

thJA

C/W

Junction-to-Case

3.3

4.0

thJC

Notes:

a. 1.36 x 2.1 surface mounted on 1” x 1” FR4 Board.

Document Number: 71087

S-50281—Rev. E, 21-Feb-05

www.vishay.com

12 3 4 5 6

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