Datasheet > SUD20N10-66L

SUD20N10-66L

更新时间： 2024-11-20 14:55:39

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威世 - VISHAY		/
页数	文件大小	规格书
9页	168K
描述
N-Channel 100 V (D-S) MOSFET

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SUD20N10-66L 数据手册

SUD20N10-66L

Vishay Siliconix

N-Channel 100 V (D-S) MOSFET

FEATURES

TrenchFET^®Power MOSFET

PRODUCT SUMMARY

•

V_DS(V)

R_DS(on)() Max.

0.066 at V_GS= 10 V

0.080 at V_GS= 4.5 V

I_D(A)

18.2

13.2

Q_g(Typ.)

100 % R_gand UIS Tested

Material categorization:

100

19.8

For definitions of compliance please see

www.vishay.com/doc?99912

TO-252

APPLICATIONS

• DC/DC Converters

•

DC/AC Inverters

Motor Drives

Drain Connected to Tab

Top View

N-Channel MOSFET

Ordering Information:

SUD20N10-66L-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

100

V_GS

T_C= 25 °C

T_C= 70 °C

16.9

Continuous Drain Current

I_D

13.6

Pulsed Drain Current (t = 300 µs)

Avalanche Current

I_DM

I_AS

Single Avalanche Energy^a

L = 0.1 mH

T_C= 25 °C

E_AS

11.25

41.7^b

2.1

Maximum Power Dissipation^a

P_D

_A= 25 °C^c

Operating Junction and Storage Temperature Range

T_J, T_stg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Junction-to-Ambient (PCB Mount)^c

Symbol

R_thJA

Limit

Unit

°C/W

Junction-to-Case (Drain)

R_thJC

Notes:

a. Duty cycle  1 %.

b. See SOA curve for voltage derating.

c. When mounted on 1" square PCB (FR-4 material).

d. Base on T_C= 25 °C.

Document Number: 62815

S13-0629-Rev. A, 25-Mar-13

For technical questions, contact: pmostechsupport@vishay.com

This document is subject to change without notice.

www.vishay.com

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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