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SUD23N06-31 PDF预览

SUD23N06-31

更新时间: 2024-11-19 06:14:55
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
7页 124K
描述
N-Channel 60-V (D-S), MOSFET

SUD23N06-31 技术参数

生命周期:Active零件包装代码:TO-252
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.7雪崩能效等级(Eas):20 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):21.4 A
最大漏源导通电阻:0.031 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):50 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SUD23N06-31 数据手册

 浏览型号SUD23N06-31的Datasheet PDF文件第2页浏览型号SUD23N06-31的Datasheet PDF文件第3页浏览型号SUD23N06-31的Datasheet PDF文件第4页浏览型号SUD23N06-31的Datasheet PDF文件第5页浏览型号SUD23N06-31的Datasheet PDF文件第6页浏览型号SUD23N06-31的Datasheet PDF文件第7页 
New Product  
SUD23N06-31  
Vishay Siliconix  
N-Channel 60-V (D-S), MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free  
VDS (V)  
RDS(on) (Ω)  
Qg (Typ.)  
I
D (A)a  
9.1  
TrenchFET® Power MOSFET  
100 % Rg and UIS Tested  
RoHS  
0.031 at VGS = 10 V  
0.045 at VGS = 4.5 V  
COMPLIANT  
60  
6.5 nC  
7.6  
APPLICATIONS  
DC/DC Converters  
TO-252  
D
G
Drain Connected to Tab  
G
D
S
S
Top View  
Ordering Information: SUD23N06-31-GE3 (Lead (Pb)-free and Halogen-free)  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
Limit  
60  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
20  
T
C = 25 °C  
TC = 70 °C  
A = 25 °C  
21.4  
17.1  
9.1a  
7.6a  
50  
Continuous Drain Current (TJ = 150 °C)  
ID  
T
TA = 70 °C  
A
IDM  
IS  
Pulsed Drain Current  
TC = 25 °C  
TA = 25 °C  
20.8  
3.8a  
20  
Continuous Source-Drain Diode Current  
IAS  
Single Pulse Avalanche Current  
Avalanche Energy  
L = 0.1 mH  
EAS  
mJ  
W
20  
T
C = 25 °C  
31.25  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
20  
Maximum Power Dissipation  
PD  
5.7a  
3.6a  
- 55 to 150  
TJ, Tstg  
°C  
Operating Junction and Storage Temperature Range  
THERMAL RESISTANCE RATINGS  
Parameter  
Maximum Junction-to-Ambientb  
Symbol  
RthJA  
Typical  
Maximum  
Unit  
t 10 s  
18  
22  
°C/W  
RthJC  
Steady State  
Maximum Junction-to-Case  
3.2  
4.0  
Notes:  
a. Surface mounted on 1" x 1" FR4 board.  
Document Number: 68857  
S-81948-Rev. A, 25-Aug-08  
www.vishay.com  
1

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