生命周期: | Active | 零件包装代码: | TO-252 |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.7 | 雪崩能效等级(Eas): | 20 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (ID): | 21.4 A |
最大漏源导通电阻: | 0.031 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-252 | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 50 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SUD23N06-31_08 | VISHAY |
获取价格 |
N-Channel 60-V (D-S), MOSFET | |
SUD23N06-31_11 | VISHAY |
获取价格 |
N-Channel 60 V (D-S), MOSFET | |
SUD23N06-31-GE3 | VISHAY |
获取价格 |
N-Channel 60-V (D-S), MOSFET | |
SUD23N06-31L | VISHAY |
获取价格 |
N-Channel 60-V (D-S), 175C MOSFET, Logic Level | |
SUD23N06-31L-E3 | VISHAY |
获取价格 |
TRANSISTOR 23 A, 60 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT PAC | |
SUD23N06-31L-T4-E3 | VISHAY |
获取价格 |
Power Field-Effect Transistor, 23A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Met | |
SUD23N06-31-T4-GE3 | VISHAY |
获取价格 |
MOSFET N-CH 60V 21.4A TO252 | |
SUD25N04-25 | VISHAY |
获取价格 |
N-Channel 40-V (D-S) 175C MOSFET | |
SUD25N04-25-E3 | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
SUD25N06-45L | VISHAY |
获取价格 |
N-Channel 60-V (D-S), 175C MOSFET, Logic Level |