Datasheet > SUD19P06-60

SUD19P06-60

更新时间： 2024-11-19 06:14:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	137K
描述
P-Channel 60-V (D-S) MOSFET

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SUD19P06-60 数据手册

New Product

SUD19P06-60

Vishay Siliconix

P-Channel 60-V (D-S) MOSFET

FEATURES

•

PRODUCT SUMMARY

TrenchFET^®Power MOSFET

V_DS(V)

r_DS(on)(Ω)

Q_g(Typ)

_D(A)^d

•

100 % UIS Tested

0.060 at V_GS= - 10 V

0.077 at V_GS= - 4.5 V

- 19

RoHS

- 60

COMPLIANT

- 16.8

APPLICATIONS

•

High Side Switch for Full Bridge Converter

•

DC/DC Converter for LCD Display

TO-252

Drain Connected to Tab

Top View

Ordering Information: SUD19P06-60-E3 (Lead (Pb)-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

- 60

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_C= 25 °C

- 18.3

- 8.19

- 30

Continuous Drain Current (T_J= 150 °C)

I_D

T_C= 125 °C

I_DM

I_AS

Pulsed Drain Current

Avalanche Current, Single Pulse

- 22

L = 0.1 mH

Repetitive Avalanche Energy, Single Pulse^a

E_AS

24.2

38.5^c

2.3^{b, c}

T_C= 25 °C

T_A= 25 °C

P_D

Power Dissipation

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

Typical

Maximum

Unit

t ≤ 10 s

Steady State

Maximum Junction-to-Ambient^b

°C/W

R_thJC

Maximum Junction-to-Case

2.7

3.25

Notes:

a. Duty cycle ≤ 1 %.

b. When mounted on 1" square PCB (FR-4 material).

c. See SOA curve for voltage derating.

d. Based up on T_C= 25 °C.

Document Number: 69253

S-72191-Rev. A, 22-Oct-07

www.vishay.com

12 3 4 5 6

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