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SUD15N15-95 PDF预览

SUD15N15-95

更新时间: 2024-11-18 22:17:47
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
3页 182K
描述
SPICE Device Model SUD15N15-95

SUD15N15-95 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.43
Is Samacsys:N配置:Single
最大漏极电流 (Abs) (ID):15 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-609代码:e0工作模式:ENHANCEMENT MODE
最高工作温度:175 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):62 W子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

SUD15N15-95 数据手册

 浏览型号SUD15N15-95的Datasheet PDF文件第2页浏览型号SUD15N15-95的Datasheet PDF文件第3页 
SPICE Device Model SUD15N15-95  
Vishay Siliconix  
N-Channel 150-V (D-S) 175° MOSFET  
CHARACTERISTICS  
N-Channel Vertical DMOS  
Macro Model (Subcircuit Model)  
Level 3 MOS  
Apply for both Linear and Switching Application  
Accurate over the 55 to 125°C Temperature Range  
Model the Gate Charge, Transient, and Diode Reverse Recovery  
Characteristics  
DESCRIPTION  
The attached spice model describes the typical electrical  
characteristics of the n-channel vertical DMOS. The subcircuit  
model is extracted and optimized over the 55 to 125°C  
temperature ranges under the pulsed 0 to 10V gate drive. The  
saturated output impedance is best fit at the gate bias near the  
threshold voltage.  
A novel gate-to-drain feedback capacitance network is used to  
model the gate charge characteristics while avoiding convergence  
difficulties of the switched Cgd model. All model parameter values  
are optimized to provide a best fit to the measured electrical data  
and are not intended as an exact physical interpretation of the  
device.  
SUBCIRCUIT MODEL SCHEMATIC  
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate  
data sheet of the same number for guaranteed specification limits.  
Document Number: 71756  
05-Jun-04  
www.vishay.com  
1

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