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SUD23N06 PDF预览

SUD23N06

更新时间: 2024-11-23 12:51:23
品牌 Logo 应用领域
飞思卡尔 - FREESCALE /
页数 文件大小 规格书
6页 415K
描述
N-Channel 60 V (D-S) 175 °C MOSFET

SUD23N06 数据手册

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SUD23N06-31L  
N-Channel  
60 V (D-S) 175 °C MOSFET  
FEATURES  
PRODUCT SUMMARY  
TrenchFET® Power MOSFET  
175 °C Junction Temperature  
I
D (A)a  
23  
VDS (V)  
rDS(on) (Ω)  
Available  
0.031 at VGS = 10 V  
0.045 at VGS = 4.5 V  
RoHS*  
60  
19.5  
COMPLIANT  
D
TO-252  
G
Drain Connected to Tab  
G
D
S
S
Top View  
N-Channel MOSFET  
Ordering Information: SUD23N06-31L  
SUD23N06-31L-E3 (Lead (Pb)-free)  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
C
Parameter  
Symbol  
Limit  
20  
Unit  
VGS  
Gate-Source Voltage  
V
TC = 25 °C  
23  
Continuous Drain Current (TJ = 175 °C)b  
ID  
TC = 100 °C  
16.5  
50  
IDM  
IS  
Pulsed Drain Current  
A
Continuous Source Current (Diode Conduction)  
Avalanche Current  
23  
IAS  
EAS  
20  
Single Avalanche Energy (Duty Cycle 1 %)  
L = 0.1 mH  
TC = 25 °C  
TA = 25 °C  
20  
mJ  
W
100  
PD  
Maximum Power Dissipation  
3a  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 175  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t 10 sec  
18  
40  
22  
50  
4
Maximum Junction-to-Ambienta  
RthJA  
Steady State  
°C/W  
RthJC  
Maximum Junction-to-Case  
3.2  
Notes:  
a. Surface Mounted on 1" x 1" FR4 board, t 10 sec.  
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