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SUD25N04-25 PDF预览

SUD25N04-25

更新时间: 2024-11-18 22:11:11
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 44K
描述
N-Channel 40-V (D-S) 175C MOSFET

SUD25N04-25 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.89配置:Single
最大漏极电流 (Abs) (ID):25 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-609代码:e0工作模式:ENHANCEMENT MODE
最高工作温度:175 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):33 W子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

SUD25N04-25 数据手册

 浏览型号SUD25N04-25的Datasheet PDF文件第2页浏览型号SUD25N04-25的Datasheet PDF文件第3页浏览型号SUD25N04-25的Datasheet PDF文件第4页 
SUD25N04-25  
Vishay Siliconix  
N-Channel 40-V (D-S) 175_C MOSFET  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.025 @ V = 10 V  
25  
20  
GS  
40  
0.040 @ V = 4.5 V  
GS  
D
TO-252  
G
Drain Connected to Tab  
G
D
S
Top View  
Order Number:  
SUD25N04-25  
S
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
40  
"20  
25  
DS  
GS  
V
V
T
= 25_C  
= 125_C  
C
b
Continuous Drain Current (T = 175_C)  
I
D
J
T
15  
C
Pulsed Drain Current  
I
50  
A
DM  
b
Continuous Source Current (Diode Conduction)  
Avalanche Current  
I
50  
S
I
25  
AR  
Repetitive Avalanche Energy (Duty Cycle v 1%)  
L = 0.1 mH  
E
AR  
31  
mJ  
b
T
= 25_C  
= 25_C  
33  
C
Maximum Power Dissipation  
P
D
W
b
T
3
A
Operating Junction and Storage Temperature Range  
T , T  
–55 to 175  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
20  
40  
25  
50  
b
Junction-to-Ambient  
R
thJA  
R
thJC  
Steady State  
_C/W  
Junction-to-Case  
3.7  
4.5  
Notes  
a. Surface Mounted on 1” x1” FR4 Board.  
b. See SOA curve for voltage derating.  
Document Number: 71129  
S-04558—Rev. B, 27-Aug-01  
www.vishay.com  
2-1  

SUD25N04-25 替代型号

型号 品牌 替代类型 描述 数据表
SUD25N04-25-E3 VISHAY

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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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