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SUD23N06-31L PDF预览

SUD23N06-31L

更新时间: 2024-11-22 22:17:47
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
4页 41K
描述
N-Channel 60-V (D-S), 175C MOSFET, Logic Level

SUD23N06-31L 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.85Is Samacsys:N
配置:Single最大漏极电流 (Abs) (ID):23 A
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-609代码:e0
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):100 W
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

SUD23N06-31L 数据手册

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SUD23N06-31L  
Vishay Siliconix  
N-Channel 60-V (D-S), 175_C MOSFET, Logic Level  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET  
D 175_C Junction Temperature  
APPLICATIONS  
VDS (V)  
rDS(on) (W)  
ID (A)a  
23  
0.031 @ V = 10 V  
GS  
60  
0.045 @ V = 4.5 V  
GS  
19.5  
D Automotive  
- 12-V Systems  
D
TO-252  
G
Drain Connected to Tab  
G
D
S
Top View  
S
N-Channel MOSFET  
Ordering Information: SUD23N06-31L  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
C
Parameter  
Symbol  
Limit  
Unit  
Gate-Source Voltage  
V
V
GS  
"20  
23  
T
= 25_C  
C
b
Continuous Drain Current (T = 175_C)  
I
D
J
T
= 100_C  
16.5  
50  
C
Pulsed Drain Current  
I
A
DM  
Continuous Source Current (Diode Conduction)  
Avalanche Current  
I
23  
S
I
20  
AR  
L = 0.1 mH  
E
AR  
20  
mJ  
Repetitive Avalanche Energy (Duty Cycle v 1%)  
T
= 25_C  
= 25_C  
100  
C
Maximum Power Dissipation  
P
W
D
a
T
3
A
Operating Junction and Storage Temperature Range  
T , T  
J
-55 to 175  
_C  
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Limit  
Unit  
18  
22  
t p 10 sec.  
Steady State  
a
Maximum Junction-to-Ambient  
R
thJA  
thJC  
_C/W  
40  
50  
4
Maximum Junction-to-Case  
R
3.2  
Notes:  
a. Surface mounted on 1” x 1” FR4 Board, t v 10 sec.  
Document Number: 72145  
S-03536—Rev. A, 24-Mar-03  
www.vishay.com  
1

SUD23N06-31L 替代型号

型号 品牌 替代类型 描述 数据表
SUD23N06-31L-E3 VISHAY

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TRANSISTOR 23 A, 60 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT PAC
SUD23N06-31-GE3 VISHAY

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N-Channel 60-V (D-S), MOSFET

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