Datasheet > SUD23N06-31-T4-GE3

SUD23N06-31-T4-GE3

更新时间： 2024-11-19 22:52:23

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威世 - VISHAY		/
页数	文件大小	规格书
10页	157K
描述
MOSFET N-CH 60V 21.4A TO252

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SUD23N06-31-T4-GE3 数据手册

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SUD23N06-31

Vishay Siliconix

N-Channel 60 V (D-S), MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)()

I_D(A)^a

9.1

Q_g(Typ.)

Definition

TrenchFET^®Power MOSFET

100 % R_gand UIS Tested

0.031 at V_GS= 10 V

0.045 at V_GS= 4.5 V

•

6.5 nC

7.6

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

DC/DC Converters

TO-252

•

Drain Connected to Tab

Top View

Ordering Information: SUD23N06-31-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

_C= 25 °C

T_C= 70 °C

_A= 25 °C

21.4

17.1

9.1^a

7.6^a

Continuous Drain Current (T_J= 150 °C)

I_D

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

T_A= 25 °C

20.8

3.8^a

Continuous Source-Drain Diode Current

I_AS

Single Pulse Avalanche Current

Avalanche Energy

L = 0.1 mH

E_AS

_C= 25 °C

31.25

5.7^a

3.6^a

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Maximum Power Dissipation

P_D

T_J, T_stg

°C

Operating Junction and Storage Temperature Range

- 55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^a

Symbol

R_thJA

Typical

Maximum

Unit

t  10 s

°C/W

R_thJC

Steady State

Maximum Junction-to-Case

3.2

4.0

Notes:

a. Surface mounted on 1" x 1" FR4 board, t  10 s.

Document Number: 68857

S11-0181-Rev. B, 07-Feb-11

www.vishay.com

12 3 4 5 6 7...10

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