Datasheet > SUD19N20-90

SUD19N20-90

更新时间： 2024-11-19 12:24:23

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
7页	590K
描述
N-Channel 200 V (D-S) 175 Â°C MOSFET

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SUD19N20-90 数据手册

SUD19N20-90

N-Channel

200 V (D-S) 175 °C MOSFET

FEATURES

PRODUCT SUMMARY

•

TrenchFET^®Power MOSFET

175 °C Junction Temperature

PWM Optimized

V_DS(V)

R_DS(on)()

I_D(A)

0.090 at V_GS= 10 V

0.105 at V_GS= 6 V

200

17.5

100 % R_gTested

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Primary Side Switch

TO-252

Drain Connected to Tab

Top View

Ordering Information:

SUD19N20-90-E3 (Lead (Pb)-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

200

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_C= 25 °C

Continuous Drain Current (T_J= 175 °C)^b

I_D

T_C= 125 °C

I_DM

I_S

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Avalanche Current

I_AS

E_AS

Single Pulse Avalanche Energy

L = 0.1 mH

T_C= 25 °C

T_A= 25 °C

136^b

3^a

P_D

Maximum Power Dissipation

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

Typical

Maximum

Unit

t  10 s

Junction-to-Ambient^a

Steady State

°C/W

R_thJC

Junction-to-Case (Drain)

0.85

1.1

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. See SOA curve for voltage derating.

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