Datasheet > STWA65N023M9

STWA65N023M9

更新时间： 2024-09-18 14:58:07

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	445K
描述
N-channel 650 V, 19.9 mOhm typ., 95 A MDmesh M9 Power MOSFET in a TO-247 long leads package

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STWA65N023M9 数据手册

STWA65N023M9

Electrical characteristics (curves)

2.1

Electrical characteristics (curves)

Figure 1. Safe operating area

Figure 2. Maximum transient thermal impedance

GADG210720220840SOA

GADG210720220846ZTH

I_D

(A)

Z_thJC

(°C/W)

I_DM

t_p=1µs

10 ²

10 ¹

10 ⁰

10 ^-1

duty = 0.5

0.4 0.3 0.2 0.1

t_p=10µs

10 ^-1

R_DS(on)max.

t_p=100µs

10 ^-2

t_p=1ms

R_thJC= 0.27 °C/W

duty = t_on/ T

0.05

Single pulse

10 ^-2

10 ^-3

T_J≤ 150 °C,

T_C= 25 °C,

Single pulse

t_p=10ms

V_(BR)DSS

t_on

10 ^-3

10 ^-1

10 ⁰

10 ¹

10 ²

10 ^-610 ^-510 ^-410 ^-310 ^-210 ^-1

V_DS(V)

t_p(s)

Figure 3. Typical output characteristics

Figure 4. Typical transfer characteristics

GADG210720220847OCH

GADG210720221025TCH

I_D

(A)

V_GS= 10 V

400

300

200

400

300

200

V_DS=20 V

9 V

8 V

7 V

100

6 V

V_DS(V)

V_GS(V)

Figure 5. Typical gate charge characteristics

Figure 6. Typical capacitance characteristics

GADG210720220848QVG

V_DD= 400 V, I_D= 48 A

GADG210720220849CVR

V_DS

(V)

V_GS

(V)

(pF)

480

400

320

240

160

10 ⁵

Q_g

V_GS

10 ⁴

10 ³

10 ²

10 ¹

C_iss

Q_gs

Q_gd

C_oss

C_rss

f = 1 MHz

10 ⁰

V_DS

10 ^-1

10 ⁰

10 ¹

10 ²

100 150 200 250

Q_g(nC)

V_DS(V)

DS14036 - Rev 3

page 5/12

1 2 3 456 7 8...12

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