Datasheet > STWA72N60DM2AG

STWA72N60DM2AG

更新时间： 2024-11-26 14:58:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	307K
描述
汽车级N沟道600 V、37 mOhm典型值、66 A MDmesh DM2功率MOSFET，TO-247长引线封装

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STWA72N60DM2AG 数据手册

STWA72N60DM2AG

Datasheet

Automotive-grade N-channel 600 V, 37 mΩ typ., 66 A, MDmesh™ DM2

Power MOSFET in a TO-247 long leads package

Features

DS(on)

max.

TOT

Order code

STWA72N60DM2AG

600 V

42 mΩ

66 A

446 W

•

AEC-Q101 qualified

Fast-recovery body diode

Extremely low gate charge and input capacitance

Low on-resistance

D(2)

100% avalanche tested

Extremely high dv/dt ruggedness

Zener-protected

G(1)

Applications

•

Switching applications

S(3)

AM01476v1_No_tab

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-

recovery diode series. It offers very low recovery charge (Q_rr) and time (t_rr) combined

with low R_DS(on), rendering it suitable for the most demanding high-efficiency

converters and ideal for bridge topologies and ZVS phase-shift converters.

Product status link

STWA72N60DM2AG

Product summary

Order code

Marking

STWA72N60DM2AG

72N60DM2

Package

Packing

TO-247 long leads

Tube

DS12726 - Rev 1 - August 2018

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...13

中文翻译

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