Datasheet > STWA75N60DM6

STWA75N60DM6

更新时间： 2023-12-20 18:44:16

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意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
14页	659K
描述
N沟道600 V、32 mOhm典型值、72 A MDmesh DM6功率MOSFET，TO-247长引线封装

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数据手册

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STWA75N60DM6 数据手册

STW75N60DM6, STWA75N60DM6

Datasheet

N-channel 600 V, 32 mΩ typ., 72 A MDmesh DM6 Power MOSFETs in TO-247

and TO-247 long leads packages

Features

max.

Order codes

STW75N60DM6

DS(on)

600 V

36 mΩ

72 A

STWA75N60DM6

•

Fast-recovery body diode

TO-247 long leads

TO-247

Lower R_DS(on)per area vs previous generation

Low gate charge, input capacitance and resistance

100% avalanche tested

D(2, TAB)

Extremely high dv/dt ruggedness

Zener-protected

G(1)

Applications

•

Switching applications

S(3)

Description

AM01476v1_tab

These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6 fast-

recovery diode series. Compared with the previous MDmesh fast generation, DM6

combines very low recovery charge (Q_rr), recovery time (t_rr) and excellent

improvement in R_DS(on)per area with one of the most effective switching behaviors

available in the market for the most demanding high-efficiency bridge topologies and

ZVS phase-shift converters.

Product status link

STW75N60DM6

STWA75N60DM6

Product summary

Order code

STW75N60DM6

Marking

Package

Packing

75N60DM6

TO-247

Tube

Order code

Marking

STWA75N60DM6

75N60DM6

TO-247 long leads

Tube

Package

Packing

DS12280 - Rev 4 - September 2023

For further information contact your local STMicroelectronics sales office.

www.st.com

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