Datasheet > STWA65N60DM6

STWA65N60DM6

更新时间： 2024-11-26 14:57:23

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
14页	331K
描述
N沟道600 V、60 mOhm典型值、38 A MDmesh DM6功率MOSFET，TO-247长引线封装

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中文翻译

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数据手册

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STWA65N60DM6 数据手册

STW65N60DM6, STWA65N60DM6

Datasheet

N-channel 600 V, 60 mΩ typ., 46 A MDmesh DM6 Power MOSFETs

in a TO‑247 and TO‑247 long leads packages

Features

max.

Order code

STW65N60DM6

STWA65N60DM6

DS(on)

600 V

71 mΩ

46 A

•

Fast-recovery body diode

Lower R_DS(on)per area vs previous generation

TO-247 long leads

TO-247

Low gate charge, input capacitance and resistance

100% avalanche tested

D(2, TAB)

Extremely high dv/dt ruggedness

Zener-protected

G(1)

Applications

•

Switching applications

S(3)

AM01476v1_tab

Description

These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6

fast-recovery diode series. Compared with the previous MDmesh fast generation,

DM6 combines very low recovery charge (Q_rr), recovery time (t_rr) and excellent

improvement in R_DS(on)per area with one of the most effective switching behaviors

available in the market for the most demanding high-efficiency bridge topologies and

ZVS phase-shift converters.

Product status links

STW65N60DM6

STWA65N60DM6

Product summary

Order code

Marking

STW65N60DM6

65N60DM6

TO-247

Package

Packing

Tube

Order code

Marking

STWA65N60DM6

65N60DM6

TO-247 long leads

Tube

Package

Packing

DS12314 - Rev 5 - May 2021

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...14

中文翻译

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