Datasheet > STWA70N60DM2

STWA70N60DM2

更新时间： 2024-11-26 14:57:59

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意法半导体 - STMICROELECTRONICS		/
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描述
N沟道600 V、37 Ohm典型值、66 A MDmesh DM2功率MOSFET，TO-247长引线封装

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STWA70N60DM2 数据手册

STWA70N60DM2

N-channel 600 V, 0.037 Ω typ., 66 A MDmesh™ DM2

Power MOSFET in a TO-247 long leads package

Datasheet - production data

Features

R_DS(on)

max.

Order code

V_DS

I_D

P_TOT

STWA70N60DM2 600 V

0.042 Ω

66 A 446 W

•

Fast-recovery body diode

Extremely low gate charge and input

capacitance

•

Low on-resistance

100% avalanche tested

Extremely high dv/dt ruggedness

Zener-protected

TO-247 long leads

Figure 1: Internal schematic diagram

Applications

•

Switching applications

Description

This high voltage N-channel Power MOSFET is

part of the MDmesh™ DM2 fast recovery diode

series. It offers very low recovery charge (Q_rr)

and time (t_rr) combined with low R_DS(on), rendering

it suitable for the most demanding high efficiency

converters and ideal for bridge topologies and

ZVS phase-shift converters.

Table 1: Device summary

Order code

Marking

Package

Packing

STWA70N60DM2

70N60DM2

TO-247 long leads

Tube

July 2015

DocID027892 Rev 2

1/12

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...12

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