Datasheet > STWA65N65DM2AG

STWA65N65DM2AG

更新时间： 2024-09-24 14:58:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	320K
描述
汽车级N沟道650 V、42 mOhm典型值、60 A MDmesh DM2功率MOSFET，TO-247长引线封装

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STWA65N65DM2AG 数据手册

STWA65N65DM2AG

Datasheet

Automotive-grade N-channel 650 V, 42 mΩ typ., 60 A MDmesh DM2

Power MOSFET in a TO-247 long leads package

Features

DS(on)

max.

TOT

Order code

STWA65N65DM2AG

650 V

50 mΩ

60 A

446 W

•

AEC-Q101 qualified

Fast-recovery body diode

Extremely low gate charge and input capacitance

Low on-resistance

D(2, TAB)

100% avalanche tested

Extremely high dv/dt ruggedness

Zener-protected

G(1)

Applications

S(3)

AM01476v1_tab

•

Switching applications

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-

recovery diode series. It offers very low recovery charge (Q_rr) and time (t_rr) combined

with low R_DS(on), rendering it suitable for the most demanding high-efficiency

converters and ideal for bridge topologies and ZVS phase-shift converters.

Product status link

STWA65N65DM2AG

Product summary

Order code

STWA65N65DM2AG

65N65DM2

Marking

Package

Packing

TO-247 long leads

Tube

DS12757 - Rev 3 - May 2020

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...12

中文翻译

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