Datasheet > STWA65N023M9

STWA65N023M9

更新时间： 2023-12-20 18:45:49

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	445K
描述
N-channel 650 V, 19.9 mOhm typ., 95 A MDmesh M9 Power MOSFET in a TO-247 long leads package

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STWA65N023M9 数据手册

STWA65N023M9

Electrical characteristics (curves)

Figure 7. Typical drain-source on-resistance

Figure 8. Normalized on-resistance vs temperature

GADG280720220826RID

GADG110720221537RON

R_DS(on)

(mΩ)

(norm.)

21.1

2.5

V_GS= 10 V

20.7

20.3

19.9

2.0

V_GS= 10 V

1.5

1.0

19.5

19.1

0.5

0.0

I_D(A)

-75

-25

125

T_J(°C)

Figure 9. Normalized gate threshold vs temperature

Figure 10. Normalized breakdown voltage vs temperature

GADG210720220852VTH

GADG210720220853BDV

V_GS(th)

V_(BR)DSS

(norm.)

1.1

1.10

I_D= 250 µA

I_D= 1 mA

1.0

0.9

0.8

1.05

1.00

0.95

0.7

0.6

0.90

0.85

-75

-25

125

T_J(°C)

-75

-25

125

T_J(°C)

Figure 11. Typical reverse diode forward characteristics

Figure 12. Typical output capacitance stored energy

GADG210720220854SDF

GADG210720220855EOS

V_SD

E_oss

(V)

(µJ)

1.2

T_J= -55 °C

1.0

0.8

T_J= 150 °C

0.6

T_J= 25 °C

0.4

0.2

0.0

I_SD(A)

100 200 300 400 500 600 V_DS(V)

DS14036 - Rev 3

page 6/12

1...3 4 567 8 9...12

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