Datasheet > STWA65N045M9

STWA65N045M9

更新时间： 2023-12-20 18:45:26

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	555K
描述
N-channel 650 V, 39 mOhm typ., 54 A MDmesh M9 Power MOSFET in a TO-247 long leads package

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STWA65N045M9 数据手册

STWA65N045M9

Datasheet

N-channel 650 V, 39 mΩ typ., 54 A MDmesh M9 Power MOSFET

in a TO‑247 long leads package

Features

DS(on)

max.

Order code

STWA65N045M9

650 V

45 mΩ

54 A

•

Worldwide best FOM R_DS(on)*Q_gamong silicon-based devices

Higher V_DSSrating

TO-247 long leads

Higher dv/dt capability

Excellent switching performance

Easy to drive

D(2, TAB)

100% avalanche tested

Applications

G(1)

•

High efficiency switching applications

Description

S(3)

AM01475v1_noZen

This N-channel Power MOSFET is based on the most innovative super-junction

MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very

low R_DS(on)per area. The silicon based M9 technology benefits from a multi-drain

manufacturing process which allows an enhanced device structure. The resulting

product has one of the lower on-resistance and reduced gate charge values, among

all silicon based fast switching super-junction Power MOSFETs, making it particularly

suitable for applications that require superior power density and outstanding

efficiency.

Product status link

STWA65N045M9

Product summary

Order code

Marking

STWA65N045M9

65N045M9

Package

Packing

TO‑247 long leads

Tube

DS14231 - Rev 2 - June 2023

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...12

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