Datasheet > STWA65N023M9

STWA65N023M9

更新时间： 2023-12-20 18:45:49

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	445K
描述
N-channel 650 V, 19.9 mOhm typ., 95 A MDmesh M9 Power MOSFET in a TO-247 long leads package

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

STWA65N023M9 数据手册

STWA65N023M9

Electrical ratings

Table 1. Absolute maximum ratings

Parameter

Symbol

Value

±30

Unit

Gate-source voltage

Drain current (continuous) at T = 25 °C

Drain current (continuous) at T = 100 °C

(1)

Drain current (pulsed)

440

463

Total power dissipation at T = 25 °C

TOT

dv/dt⁽²⁾

di/dt⁽²⁾

dv/dt⁽³⁾

Peak diode recovery voltage slope

Peak diode recovery current slope

MOSFET dv/dt ruggedness

V/ns

A/μs

V/ns

°C

900

120

Storage temperature range

stg

-55 to 150

Operating junction temperature range

°C

1. Pulse width is limited by safe operating area.

≤ 48 A, V (peak) < V

, V = 400 V.

(BR)DSS DD

(peak) < V

, V = 400 V.

(BR)DSS DD

Table 2. Thermal data

Parameter

Symbol

Value

0.27

Unit

°C/W

thJC

Thermal resistance, junction-to-case

Thermal resistance, junction-to-ambient

thJA

Table 3. Avalanche characteristics

Symbol

Parameter

Value

Unit

Avalanche current, repetitive or non-repetitive (pulse width limited by T max.)

Single pulse avalanche energy (starting T = 25 °C, I = I , V = 50 V)

1307

DS14036 - Rev 3

page 2/12

123 4 5 6 7...12

中文翻译

下载PDF

与STWA65N023M9相关器件

型号	品牌	获取价格	描述	数据表
STWA65N045M9	STMICROELECTRONICS	获取价格	N-channel 650 V, 39 mOhm typ., 54 A MDmesh M9 Power MOSFET in a TO-247 long leads package
STWA65N60DM6	STMICROELECTRONICS	获取价格	N沟道600 V、60 mOhm典型值、38 A MDmesh DM6功率MOSFET，T
STWA65N65DM2AG	STMICROELECTRONICS	获取价格	汽车级N沟道650 V、42 mOhm典型值、60 A MDmesh DM2功率MOSFE
STWA67N60DM6	STMICROELECTRONICS	获取价格	N-channel 600 V, 45 mOhm typ., 58 A MDmesh DM6 Power MOSFET in a TO-247 long leads package
STWA67N60M6	STMICROELECTRONICS	获取价格	N-channel 600 V, 45 mOhm typ., 52 A MDmesh M6 Power MOSFET in a TO-247 long leads package
STWA68N60M6	STMICROELECTRONICS	获取价格	N沟道600 V、35 mOhm典型值、63 A MDmesh M6功率MOSFET，TO
STWA68N65DM6	STMICROELECTRONICS	获取价格	N沟道650 V、0.050 Ohm典型值、58A MDmesh DM6功率MOSFET，
STWA68N65DM6AG	STMICROELECTRONICS	获取价格	Automotive-grade N-channel 650 V, 33 mOhm typ., 72 A MDmesh DM6 Power MOSFET in a TO-247 l
STWA70N60DM2	STMICROELECTRONICS	获取价格	N沟道600 V、37 Ohm典型值、66 A MDmesh DM2功率MOSFET，TO
STWA70N60DM6	STMICROELECTRONICS	获取价格	N沟道600 V、36 mOhm典型值、62 A MDmesh DM6功率MOSFET，T