Datasheet > STWA40N60M2

STWA40N60M2

更新时间： 2023-12-20 18:45:58

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	345K
描述
N沟道600 V、0.078 Ohm典型值、34 A MDmesh M2功率MOSFET，TO247长引线封装

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STWA40N60M2 数据手册

STWA40N60M2

Datasheet

N-channel 600 V, 78 mΩ typ., 34 A MDmesh M2 Power MOSFET

in a TO-247 long leads package

Features

DS(on)

max.

Order code

STWA40N60M2

600 V

88 mΩ

34 A

•

Extremely low gate charge

Excellent output capacitance (C_oss) profile

100% avalanche tested

Zener-protected

D(2, TAB)

Applications

•

Switching applications

LLC resonant converters

G(1)

Description

S(3)

AM01476v1_tab

This device is an N-channel Power MOSFET developed using MDmesh M2

technology. Thanks to its strip layout and an improved vertical structure, the device

exhibits low on-resistance and optimized switching characteristics, rendering it

suitable for the most demanding high efficiency converters.

Product status link

STWA40N60M2

Product summary

Order code

STWA40N60M2

Marking

Package

Packing

40N60M2

TO-247 long leads

Tube

DS11877 - Rev 2 - October 2020

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...12

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