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STWA40N60M2 PDF预览

STWA40N60M2

更新时间: 2023-12-20 18:45:58
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
12页 345K
描述
N沟道600 V、0.078 Ohm典型值、34 A MDmesh M2功率MOSFET,TO247长引线封装

STWA40N60M2 数据手册

 浏览型号STWA40N60M2的Datasheet PDF文件第2页浏览型号STWA40N60M2的Datasheet PDF文件第3页浏览型号STWA40N60M2的Datasheet PDF文件第4页浏览型号STWA40N60M2的Datasheet PDF文件第6页浏览型号STWA40N60M2的Datasheet PDF文件第7页浏览型号STWA40N60M2的Datasheet PDF文件第8页 
STWA40N60M2  
Electrical characteristics (curves)  
2.1  
Electrical characteristics (curves)  
Figure 1. Safe operating area  
Figure 2. Thermal impedance  
GC18460  
AM16099v1  
ID  
(A)  
10 2  
10 1  
10µs  
100µs  
1ms  
10ms  
10 0  
TJ = 150 °C  
TC = 25 °C  
Single pulse  
10 -1  
10 -1  
10 0  
10 1  
10 2  
VDS (V)  
Figure 3. Output characteristics  
Figure 4. Transfer characteristics  
AM16101v1  
ID  
(A)  
VDS=18V  
80  
70  
60  
50  
40  
30  
20  
10  
0
2
8
10  
VGS(V)  
0
4
6
Figure 5. Gate charge vs gate-source voltage  
Figure 6. Static drain-source on-resistance  
AM16103v1  
AM16102v1 VDS  
(V)  
V
(V)  
GS  
R
mΩ  
DS(on)  
V
DD=480V  
VGS  
12  
I
D
=34A  
500  
400  
300  
200  
VDS  
10  
8
6
4
2
0
100  
0
30  
60  
Qg(nC)  
0
10  
20  
40  
50  
D
DS11877 - Rev 2  
page 5/12  
 

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