Datasheet > STWA40N60M2

STWA40N60M2

更新时间： 2023-12-20 18:45:58

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	345K
描述
N沟道600 V、0.078 Ohm典型值、34 A MDmesh M2功率MOSFET，TO247长引线封装

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STWA40N60M2 数据手册

STWA40N60M2

Electrical characteristics

Table 7. Source-drain diode

Test conditions

Symbol

Parameter

Source-drain current

Min.

Typ. Max. Unit

136

1.6

(1)

Source-drain current (pulsed)

Forward on voltage

SDM

(2)

= 0 V, I = 34 A

= 34 A, di/dt = 100 A/µs,

= 60 V

Reverse recovery time

Reverse recovery charge

Reverse recovery current

Reverse recovery time

Reverse recovery charge

440

8.2

µC

(see Figure 15. Test circuit for inductive

load switching and diode recovery times)

RRM

= 34 A, di/dt = 100 A/µs,

= 60 V, T = 150 °C

568

11.5

µC

(see Figure 15. Test circuit for inductive

load switching and diode recovery times)

Reverse recovery current

40.5

RRM

1. Pulse width is limited by safe operating area.

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.

DS11877 - Rev 2

page 4/12

1 2 345 6 7...12

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