Datasheet > STWA48N60M2

STWA48N60M2

更新时间： 2024-09-24 14:58:23

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
11页	310K
描述
N沟道600 V、0.06 Ohm典型值、42 A MDmesh M2功率MOSFET，TO-247长引线封装

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STWA48N60M2 数据手册

STWA48N60M2

Datasheet

N-channel 600 V, 60 mΩ typ., 42 A MDmesh M2 Power MOSFET

in a TO‑247 long leads package

Features

@ T

max.

Order code

Jmax.

DS(on)

STWA48N60M2

650 V

70 mΩ

42 A

•

Extremely low gate charge

Excellent output capacitance (C_OSS) profile

100% avalanche tested

Zener-protected

D(2, TAB)

Applications

•

Switching applications

G(1)

Description

This device is an N-channel Power MOSFET developed using MDmesh M2

technology. Thanks to its strip layout and an improved vertical structure, the device

exhibits low on-resistance and optimized switching characteristics, rendering it

suitable for the most demanding high efficiency converters.

S(3)

AM01475V1

Product status

STWA48N60M2

Device summary

Order code

Marking

STWA48N60M2

48N60M2

Package

Packing

TO-247 long leads

Tube

DS11409 - Rev 3 - March 2020

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...11

中文翻译

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